PD57060-E

Overview

The PD57060-E is an N-channel enhancement-mode lateral MOSFET from STMicroelectronics, designed for RF power applications. It features a maximum drain-source voltage (Vds) of 65 V and a continuous drain current (Id) of 7 A. The device operates at frequencies up to 1 GHz, delivering 60 W of output power with a typical gain of 14.3 dB. It has a maximum power dissipation (Pd) of 79 W and a gate-source voltage (Vgs) limit of ±20 V. The component is housed in a PowerSO-10RF package, suitable for surface mount installation, and supports operating temperatures from -65 °C to +150 °C.

Feature Summary

• Lateral MOSFET technology optimized for high-frequency RF power amplification
• High thermal stability supporting robust operation in demanding environments
• Surface-mount PowerSO-10RF package design for efficient PCB integration

Applications

• IFF Mode-S interrogator systems operating at 1030 MHz
• RF power amplifier stages requiring 60 W output capability
• Industrial and communication equipment utilizing lateral MOSFETs

Procurement Notes

Verify the specific suffix variant required for your application, as packaging options such as tube or reel configurations exist within the PD57060 family. Confirm that the PowerSO-10RF package dimensions align with your board layout constraints. Ensure that the thermal management solution can handle the 79 W power dissipation rating under actual operating conditions. Cross-reference the exact part number with official STMicroelectronics documentation to confirm current production status and availability.

Selection Notes

Select this component when designing RF circuits requiring 65 V breakdown and 60 W output power at 1 GHz. The lateral structure provides excellent thermal stability compared to vertical alternatives. Consider the PowerSO-10RF package for its balance of power handling and footprint. Evaluate the 14.3 dB gain specification against your system requirements. Ensure the driver circuit can provide the necessary 20 V gate drive without exceeding limits.

Part Context

The PD57060-E belongs to the PD57000 series of N-channel lateral MOSFETs developed by STMicroelectronics. This family is specifically engineered for RF power applications, offering high efficiency and linearity. The device is often used in conjunction with other members of the series, such as the PD57002-E and PD57018-E, in multi-stage amplifier designs like the STEVAL-TDR007V1 reference platform.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Designers should consult STMicroelectronics directly for qualified replacements or equivalent devices within the same RF LDMOST plastic family.