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The PD57060S-E is an N-channel RF power MOSFET manufactured by STMicroelectronics, designed for high-frequency applications up to 1 GHz. It delivers a typical output power of 60 W with a gain of 14.3 dB at the specified operating frequency. The device features a maximum drain-source voltage (Vds) of 65 V and a continuous drain current (Id) of 7 A. It operates within a temperature range of -65°C to +150°C and has a power dissipation rating of 79 W. The component is housed in a PowerSO-10RF-Straight-4 surface-mount package.
Verify the specific suffix 'E' against official datasheets to confirm compliance with environmental standards and material declarations. Confirm that the PowerSO-10RF-Straight-4 package variant matches the intended PCB footprint requirements. Ensure storage conditions account for humidity sensitivity as indicated in manufacturer documentation before assembly.
Select this component when designing circuits requiring 60 W output power at 1 GHz with a 65 V supply limit. Consider the 79 W power dissipation capability and the need for adequate thermal management given the SMD package. Verify that the 14.3 dB gain meets system link budget requirements without excessive external amplification.
This part belongs to the PD57060S-E series of RF power transistors. It is often utilized in conjunction with other devices like the PD57002-E and PD57018-E in complex amplifier architectures. The 'S' designation typically indicates a specific straight-pin variant within the broader plastic family of LDMOST transistors offered by the manufacturer.
PD57060TR-E offers identical electrical characteristics but utilizes a formed lead reel package instead of the straight tube configuration.