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The PD57060TR-E is an N-channel enhancement-mode lateral field-effect RF power MOSFET manufactured by STMicroelectronics. It operates at a drain-source voltage of 65 V and delivers a continuous drain current of 7 A. The device achieves an output power of 60 W with a typical gain of 14.3 dB at 945 MHz and 28 V supply. It functions at frequencies up to 1 GHz, with a maximum power dissipation of 79 W. Operating temperatures range from -65 °C to +150 °C. The component utilizes the PowerSO-10RF-Formed-4 surface-mount package.
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Select this component for designs requiring 60 W output power at frequencies up to 1 GHz. Ensure the circuit supports a 28 V common source operating condition. Verify thermal management capabilities to handle 79 W power dissipation within the specified temperature range. Confirm compatibility with the PowerSO-10RF package assembly requirements.
This part belongs to the PD57060S-E series of RF power transistors. It represents STMicroelectronics' LDMOS technology integrated into a plastic surface-mount package. The device is optimized for RF performance while maintaining ease of assembly compared to traditional ceramic packages.
Public confirmed substitute part numbers are not available in the provided documentation.