PD84008-E

PD84008-E

$8.87
  • Description:RF MOSFET LDMOS 7.5V PWRSO-10RF
  • Series:-

SKU:c50162597b0d Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 7.5V PWRSO-10RF
  • Series:-
  • Mfr:STMicroelectronics
  • Package:Tube
  • Technology:LDMOS
  • Frequency:870MHz
  • Gain:16.2dB
  • Voltage - Test:7.5 V
  • Current Rating (Amps):7A
  • Noise Figure:-
  • Current - Test:250 mA
  • Power - Output:2W
  • Voltage - Rated:25 V
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Package / Case:PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
  • Supplier Device Package:PowerSO-10RF (Formed Lead)
  • Configuration:-

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PD84008-E

Overview

The PD84008-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor manufactured by STMicroelectronics. It utilizes silicon LDMOS technology and operates at 13.6 V in common source mode with frequencies up to 1 GHz. Key electrical parameters include an output power of 8 W, a gain of 14.7 dB at 870 MHz under 7.5 V bias, a continuous drain current of 7 A, and a drain-source breakdown voltage of 25 V. The device features a maximum gate-source voltage of +15 V and a power dissipation rating of 26.7 W. It supports an operating temperature range from -65 °C to +150 °C and is housed in the PowerSO-10RF plastic package.

Feature Summary

  • Common source configuration designed for high gain and broadband commercial applications
  • Plastic PowerSO-10RF package optimized for RF performance and ease of assembly
  • Excellent thermal stability and reliability inherent to LDMOS technology
  • Integrated ESD protection mechanisms

Applications

  • Portable radio systems requiring superior linearity
  • Broadband commercial RF amplification
  • Industrial RF equipment applications

Procurement Notes

Verify component authenticity through authorized channels as the PD84008-E is listed as obsolete. Confirm RoHS compliance status via official documentation before integration. Check for moisture sensitivity handling requirements due to the plastic package construction. Ensure supply chain sources provide valid traceability records for this discontinued part number.

Selection Notes

Select this component for designs requiring 8 W output power within the 1 GHz frequency range. Consider the PowerSO-10RF package constraints for PCB layout and thermal management. Evaluate the 14.7 dB gain specification against system link budget requirements. Verify that the 25 V breakdown voltage aligns with the intended supply voltage headroom.

Part Context

The PD84008-E belongs to STMicroelectronics' portfolio of RF power transistors utilizing LDMOS technology. It represents an early adoption of SMD plastic packaging for high-power RF applications, specifically the PowerSO-10RF form factor. This series targets the transition from traditional ceramic packages to surface-mount solutions for cost-sensitive and compact RF designs.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. The PD84008L-E shares similar electrical characteristics but utilizes a different PowerFLAT package. Designers should consult official replacement guides or contact the manufacturer directly for qualified alternatives.

PD84008-EPD84008-E
$8.87
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