PD85004

Overview

The PD85004 is an N-channel RF MOSFET transistor manufactured by STMicroelectronics. It utilizes silicon technology and operates at frequencies up to 1 GHz. Key electrical parameters include a continuous drain current of 2 A, a drain-source breakdown voltage of 40 V, and a gate-source voltage of +15 V. The device delivers an output power of 4 W with a gain of 17 dB. Power dissipation is rated at 6 W. It functions within a temperature range of -65 C to +150 C. The component is housed in an SOT-89-4 package for surface mount installation.

Feature Summary

• Designed for high-frequency radio frequency applications
• Provides excellent thermal stability during operation
• Constructed as a BeO-free amplifier component

Applications

• Two-way radio systems
• RF power amplification circuits
• Demonstration boards for LDMOS transistors

Procurement Notes

Verify the obsolete status of this component before initiating any design integration. Confirm availability through authorized distributors or secondary market channels. Ensure that replacement strategies account for potential supply chain constraints associated with end-of-life products. Validate RoHS compliance details directly from the manufacturer documentation prior to procurement.

Selection Notes

Select this component for designs requiring 4 W output power at frequencies near 900 MHz. Verify compatibility with 13.6 V supply voltages and ensure thermal management supports the specified power dissipation. Check that the SOT-89-4 package fits the board layout constraints. Confirm that the operating temperature range meets the environmental requirements of the final application.

Part Context

This part belongs to the family of RF MOSFET transistors produced by STMicroelectronics. It is specifically categorized under RF Power MOSFETs. The device is often referenced in evaluation kits such as the STEVAL-TDR019V1, which demonstrates its performance in two-way radio applications. It serves as a discrete active component for RF signal amplification.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Due to the obsolete status, direct pin-to-pin replacements may require circuit redesign. Consult official engineering change notices or contact the manufacturer for recommended alternative components suitable for similar RF power applications.