PD85006-E

Overview

The PD85006-E is an N-channel enhancement-mode lateral MOSFET (LDMOS) RF power transistor manufactured by STMicroelectronics. It operates at a test voltage of 13.6 V with a drain current of 200 mA. The device delivers 6 W output power and provides 17 dB gain at a frequency of 870 MHz. Rated for up to 40 V, it is housed in a PowerSO-10 package with a exposed bottom pad.

Feature Summary

• N-channel enhancement-mode LDMOS technology
• PowerSO-10 plastic package with exposed thermal pad
• Broadband performance capability

Applications

• Portable radio systems
• UHF RFID readers
• Commercial broadband applications

Procurement Notes

Verify component status as the PD85006-E is listed as obsolete or discontinued in distributor records. Confirm availability through authorized channels or secondary markets. Ensure compliance with RoHS3 specifications and check moisture sensitivity level (MSL 3) handling requirements during storage and assembly processes.

Selection Notes

Select this component for designs requiring high linearity and reliability in common source configurations. The PowerSO-10 package offers superior thermal stability and ease of assembly compared to traditional ceramic packages. Consider the 870 MHz operating frequency and 6 W output power limits when matching impedance networks.

Part Context

This part belongs to STMicroelectronics' RF power LDMOS transistor portfolio, specifically designed for commercial and industrial applications. It utilizes advanced LDMOS technology to provide excellent gain and linearity. The PowerSO-10 package represents a JEDEC-approved high-power SMD solution optimized for RF needs.

Replacement Considerations

Check for direct substitutes within the PD85006 family, such as PD85006L-E, which may offer similar electrical characteristics. Verify pinout compatibility and thermal resistance values before substitution. Consult official datasheets for any functional differences between variants.