PD85006L-E

PD85006L-E

$3.42
  • Description:RF MOSFET LDMOS 13.6V POWERFLAT
  • Series:-

SKU:da3a55826c4f Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 13.6V POWERFLAT
  • Series:-
  • Mfr:STMicroelectronics
  • Package:Tape & Reel (TR)
  • Technology:LDMOS
  • Frequency:870MHz
  • Gain:17dB
  • Voltage - Test:13.6 V
  • Current Rating (Amps):2A
  • Noise Figure:-
  • Current - Test:200 mA
  • Power - Output:5W
  • Voltage - Rated:40 V
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Package / Case:8-PowerVDFN
  • Supplier Device Package:PowerFLAT™ (5x5)
  • Configuration:-

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PD85006L-E

Overview

The PD85006L-E is an N-channel enhancement-mode lateral Field-Effect RF power transistor from the LdmoST plastic family. It operates at 13.6 V in common source mode at frequencies up to 1 GHz. Key electrical parameters include a drain-source voltage of 40 V, maximum operating junction temperature of 150 °C, and output power of 6 W with 15 dB gain at 870 MHz. The device features excellent thermal stability, ESD protection compliant with Human Body Model Class 2, and moisture sensitivity level MSL 3.

Feature Summary

  • Common source configuration utilizing ST's latest LDMOS technology for high gain and broadband performance.
  • Leadless SMD plastic PowerFLAT package designed for high reliability and ease of assembly.
  • Superior linearity performance optimized for mobile radio applications.

Applications

  • Mobile radio applications
  • Broadband commercial applications
  • Industrial applications

Procurement Notes

Verify component authenticity by checking the manufacturer marking '85006' on the PowerFLAT package against official datasheet specifications. Confirm compliance with RoHS directives and ECOPACK lead-free standards. Ensure storage conditions respect the specified moisture sensitivity level (MSL 3) prior to soldering.

Selection Notes

Select this component for designs requiring high gain and linearity in the 860-960 MHz range. Verify that the system can accommodate the 13.6 V supply voltage and 2 A drain current limit. Ensure the PCB layout supports the PowerFLAT footprint and provides adequate thermal dissipation given the 6 °C/W junction-to-case thermal resistance.

Part Context

This part belongs to the LdmoST plastic family of RF power transistors. It shares design characteristics with other models like the PD85006-E but utilizes the PowerFLAT package instead of the PowerSO-10RF. It is intended for use in hybrid RF power modules for mobile radios.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Designers should consult STMicroelectronics directly for potential cross-references or updated product recommendations.

FAQ

What is the maximum operating junction temperature?

The maximum operating junction temperature is 150 °C.

Is the device compatible with standard surface mount assembly processes?

Yes, it is housed in a leadless SMD plastic PowerFLAT package designed for surface mount technology.

What is the typical output power at 870 MHz?

The typical output power is 6 W with 15 dB gain at 870 MHz when operated at 13.6 V.

PD85006L-EPD85006L-E
$3.42
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