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The PD85006L-E is an N-channel enhancement-mode lateral Field-Effect RF power transistor from the LdmoST plastic family. It operates at 13.6 V in common source mode at frequencies up to 1 GHz. Key electrical parameters include a drain-source voltage of 40 V, maximum operating junction temperature of 150 °C, and output power of 6 W with 15 dB gain at 870 MHz. The device features excellent thermal stability, ESD protection compliant with Human Body Model Class 2, and moisture sensitivity level MSL 3.
Verify component authenticity by checking the manufacturer marking '85006' on the PowerFLAT package against official datasheet specifications. Confirm compliance with RoHS directives and ECOPACK lead-free standards. Ensure storage conditions respect the specified moisture sensitivity level (MSL 3) prior to soldering.
Select this component for designs requiring high gain and linearity in the 860-960 MHz range. Verify that the system can accommodate the 13.6 V supply voltage and 2 A drain current limit. Ensure the PCB layout supports the PowerFLAT footprint and provides adequate thermal dissipation given the 6 °C/W junction-to-case thermal resistance.
This part belongs to the LdmoST plastic family of RF power transistors. It shares design characteristics with other models like the PD85006-E but utilizes the PowerFLAT package instead of the PowerSO-10RF. It is intended for use in hybrid RF power modules for mobile radios.
Public confirmed substitute part numbers are not available in the provided documentation. Designers should consult STMicroelectronics directly for potential cross-references or updated product recommendations.
The maximum operating junction temperature is 150 °C.
Yes, it is housed in a leadless SMD plastic PowerFLAT package designed for surface mount technology.
The typical output power is 6 W with 15 dB gain at 870 MHz when operated at 13.6 V.