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The PD85015-E is an N-channel enhancement-mode lateral MOSFET RF power transistor from the LdmoST plastic family. It operates at 13.6 V in common source mode up to 1 GHz. Key electrical parameters include a drain-source voltage of 40 V, continuous drain current of 5 A, and power dissipation of 59 W. At 870 MHz with 13.6 V supply, it delivers 15 W output power with 16 dB gain. The device features excellent thermal stability and linearity, housed in a JEDEC-approved PowerSO-10RF SMD package.
Verify the specific ordering suffix (E) against the manufacturer's current datasheet to confirm compliance with environmental directives such as RoHS. Ensure the selected packaging variant matches the required assembly method, as options include formed or straight leads in tube or tape and reel formats. Cross-reference the part number with official distributor catalogs to confirm availability status and lead times prior to procurement planning.
Select this component when designing circuits requiring high gain and linearity at frequencies up to 1 GHz. The device is optimized for operation at 13.6 V. Consider the PowerSO-10RF package dimensions for PCB layout constraints. Verify that the thermal management solution can handle the specified junction-to-case thermal resistance to maintain safe operating temperatures under maximum load conditions.
This transistor belongs to the PD850xx-E series of LdmoST plastic family devices. It shares architectural similarities with other members like the PD85035-E but differs in output power capabilities. The series represents STMicroelectronics' integration of LDMOS technology into standard SMD plastic packages, offering a balance between performance and ease of assembly for RF power amplification tasks.
PD85015S-E: Same electrical specifications but utilizes straight leads instead of formed leads in the PowerSO-10RF package.