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The PD85015S-E is an N-channel enhancement-mode lateral MOSFET from the LdmoST plastic family, designed for high gain and broadband commercial applications. It operates at 13.6 V in common source mode up to 1 GHz. Key electrical parameters include a drain-source voltage of 40 V, continuous drain current of 5 A, and power dissipation of 59 W at 70 °C case temperature. At 870 MHz with 13.6 V supply and 150 mA quiescent current, it delivers 15 W output power with 16 dB gain. The device features excellent thermal stability and ESD protection.
Verify the specific ordering suffix 'S' corresponds to the PowerSO-10RF straight lead package variant rather than the formed lead version. Confirm environmental compliance status via ECOPACK specifications on the manufacturer website. Ensure procurement channels provide valid traceability documentation for this production data component.
Select this component when a straight lead PowerSO-10RF package is required for surface mount assembly. Verify that the 40 V drain-source breakdown voltage and 5 A continuous current ratings meet the circuit design constraints. Ensure the operating frequency range up to 1 GHz aligns with the system's bandwidth requirements.
This part belongs to the PD85015-E series within STMicroelectronics' LdmoST plastic family. The 'S' suffix specifically denotes the straight lead configuration of the PowerSO-10RF package, distinguishing it from the formed lead (PD85015-E) and tape-and-reel variants.
Direct substitutes within the same package and pinout are not explicitly listed in the provided datasheet. Evaluate other members of the LdmoST family or similar RF power transistors by matching the 40 V Vds, 15 W Pout, and PowerSO-10RF straight lead mechanical dimensions.