PD85025C

PD85025C

$42.54
  • Description:RF MOSFET LDMOS 13.6V M243
  • Series:-

SKU:3a5da1fe14bd Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 13.6V M243
  • Series:-
  • Mfr:STMicroelectronics
  • Package:Box
  • Technology:LDMOS
  • Frequency:945MHz
  • Gain:17.5dB
  • Voltage - Test:13.6 V
  • Current Rating (Amps):7A
  • Noise Figure:-
  • Current - Test:300 mA
  • Power - Output:10W
  • Voltage - Rated:40 V
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Package / Case:M243
  • Supplier Device Package:M243
  • Configuration:-

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PD85025C

Overview

The PD85025C is a common source N-channel, enhancement-mode lateral Field-Effect RF power transistor from the LdmoST family. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. The device features excellent gain, linearity and reliability. Key electrical parameters include a drain-source voltage of 40 V, a maximum operating junction temperature of 200 °C, and a power dissipation of 93 W at TC = 70 °C. At 945 MHz and 13.6 V, it delivers an output power of 25 W with 16 dB gain.

Feature Summary

  • Excellent thermal stability
  • Common source configuration
  • BeO free package
  • ESD protection

Applications

  • High gain broadband commercial applications
  • Industrial applications
  • Mobile applications

Procurement Notes

Verify component authenticity through authorized STMicroelectronics distributors or official channels. Confirm that the M243 package matches design requirements. Check for ECOPACK compliance if environmental regulations apply. Ensure proper handling due to ESD sensitivity. Review preliminary data status as specifications may change without notice.

Selection Notes

Select based on required frequency range up to 1 GHz and 13.6 V operation. Consider the 40 V drain-source voltage rating for system headroom. Evaluate thermal management needs given the 1.4 °C/W junction-to-case resistance. Verify impedance matching for 945 MHz operation using provided input and load impedance values.

Part Context

The PD85025C belongs to the LdmoST family of lateral MOSFETs designed for RF power amplification. It utilizes ST's LDMOS technology for superior linearity and reliability. The device is housed in the M243 epoxy-sealed package, which is lead-free compliant.

Replacement Considerations

PD85025TR-E: Similar RF MOSFET but in PowerSO-10RF package.

FAQ

What is the maximum operating junction temperature?

The maximum operating junction temperature is 200 °C.

Is the package lead-free?

Yes, the device is offered in ECOPACK packages with lead-free second level interconnect.

What is the typical gain at 945 MHz?

The typical gain is 16 dB at 945 MHz with 13.6 V supply and 300 mA bias current.

PD85025CPD85025C
$42.54
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