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The PD85025C is a common source N-channel, enhancement-mode lateral Field-Effect RF power transistor from the LdmoST family. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. The device features excellent gain, linearity and reliability. Key electrical parameters include a drain-source voltage of 40 V, a maximum operating junction temperature of 200 °C, and a power dissipation of 93 W at TC = 70 °C. At 945 MHz and 13.6 V, it delivers an output power of 25 W with 16 dB gain.
Verify component authenticity through authorized STMicroelectronics distributors or official channels. Confirm that the M243 package matches design requirements. Check for ECOPACK compliance if environmental regulations apply. Ensure proper handling due to ESD sensitivity. Review preliminary data status as specifications may change without notice.
Select based on required frequency range up to 1 GHz and 13.6 V operation. Consider the 40 V drain-source voltage rating for system headroom. Evaluate thermal management needs given the 1.4 °C/W junction-to-case resistance. Verify impedance matching for 945 MHz operation using provided input and load impedance values.
The PD85025C belongs to the LdmoST family of lateral MOSFETs designed for RF power amplification. It utilizes ST's LDMOS technology for superior linearity and reliability. The device is housed in the M243 epoxy-sealed package, which is lead-free compliant.
PD85025TR-E: Similar RF MOSFET but in PowerSO-10RF package.
The maximum operating junction temperature is 200 °C.
Yes, the device is offered in ECOPACK packages with lead-free second level interconnect.
The typical gain is 16 dB at 945 MHz with 13.6 V supply and 300 mA bias current.