PD85025S-E

PD85025S-E

$17.31
  • Description:RF MOSFET LDMOS 13.6V PWRSO-10RF
  • Series:-

SKU:101306dc8d42 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 13.6V PWRSO-10RF
  • Series:-
  • Mfr:STMicroelectronics
  • Package:Tube
  • Technology:LDMOS
  • Frequency:870MHz
  • Gain:17.3dB
  • Voltage - Test:13.6 V
  • Current Rating (Amps):7A
  • Noise Figure:-
  • Current - Test:300 mA
  • Power - Output:10W
  • Voltage - Rated:40 V
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Package / Case:PowerSO-10 Exposed Bottom Pad
  • Supplier Device Package:PowerSO-10RF (Straight Lead)
  • Configuration:-

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PD85025S-E

Overview

The PD85025S-E is an N-channel RF LDMOS transistor manufactured by STMicroelectronics. It operates within a frequency range of 340 to 520 MHz and supports a supply voltage of 15 V. The device delivers an output power of 10 WPEP with a minimum gain of 16.5 dB. Key electrical characteristics include a drain current of 1.25 A at full power, second harmonic suppression of -37/-60 dB, and third harmonic suppression of -60/-68 dB. It maintains stability under load mismatch conditions up to 20:1 VSWR.

Feature Summary

  • Designed for UHF OFDM and two-way mobile radio applications
  • Provides excellent thermal stability
  • Capable of handling significant load mismatch conditions

Applications

  • UHF OFDM systems
  • Two-way mobile radios

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm exact specifications. Confirm availability status as distribution channels may vary. Ensure compliance with moisture sensitivity levels during storage and handling procedures prior to assembly.

Selection Notes

Select this component for broadband operations in the 340-520 MHz band requiring stable performance. Evaluate thermal management requirements given the operating conditions. Verify compatibility with standard 15 V supply voltages used in mobile radio architectures.

Part Context

This part belongs to the PD85025 series of RF power transistors from STMicroelectronics. It is specifically engineered for high-efficiency amplification in UHF bands. The device utilizes lateral MOSFET technology optimized for linear operation in communication equipment.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation.

PD85025S-EPD85025S-E
$17.31
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