PD85025STR-E

Overview

The PD85025STR-E is an N-channel RF LDMOS transistor manufactured by STMicroelectronics. It operates within a frequency range of 340 to 520 MHz and supports a supply voltage of 15 V. The device delivers an output power of 10 WPEP with a minimum gain of 16.5 dB at the specified power level. It features excellent thermal stability and handles load mismatches up to 20:1. The component utilizes a PowerSO-10RF package for surface mount installation.

Feature Summary

• Designed for UHF OFDM and two-way mobile radio applications
• Provides excellent thermal stability under operating conditions
• Capable of handling significant load mismatch without failure

Applications

• UHF OFDM systems
• Two-way mobile radios

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging type, as standard designations may differ from reel-based variants. Confirm RoHS compliance status through current datasheets. Ensure availability aligns with project timelines due to potential lifecycle changes.

Selection Notes

Select this component for broadband RF power amplifier designs requiring stable performance in the 340-520 MHz band. Verify that the 15 V supply voltage and 10 WPEP output requirements match the system architecture. Ensure PCB layout supports the required thermal dissipation and impedance matching networks.

Part Context

This part belongs to the PD85025 series of RF power transistors. It is commonly evaluated using demonstration boards like the STEVAL-TDR022V1 to validate circuit performance before final integration. The device represents a silicon LDMOS technology solution for high-frequency power amplification.

Replacement Considerations

Check for updated revisions or alternative packages within the same product family. Consult official substitution lists for equivalent performance characteristics if the specific STR-E variant is unavailable.