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The PD85035A-E is a discontinued N-channel enhancement-mode lateral RF power MOSFET from STMicroelectronics, designed for high-gain broadband applications. It operates at 13.6 V in common source mode with frequencies up to 1 GHz. The device delivers 35 W output power with 14.9 dB gain at 870 MHz. It utilizes LDMOS technology mounted in the PowerSO-10RF plastic package, which is JEDEC approved and optimized for RF performance and assembly ease.
This component is officially listed as End-of-Life (EOL) by STMicroelectronics. Availability is restricted or non-existent through standard distribution channels. Verification of final purchase orders must confirm the specific termination status and any remaining stock conditions directly with authorized suppliers before integration into new designs.
Designers should consider the PD85035A-E only for legacy system maintenance or repair due to its discontinued status. For new developments, alternative active devices within the PD85035 series or newer LDMOS families are recommended. Ensure that the PowerSO-10RF package thermal requirements and mounting guidelines from application note AN1294 are strictly followed if used.
The PD85035A-E belongs to the PD85035-E family of lateral MOSFETs. It shares core specifications with the base PD85035-E model but may differ in specific suffix designations related to tape-and-reel packaging or testing criteria. It represents ST’s transition toward SMD plastic packages for RF power applications, replacing older ceramic or metal styles.
Public documentation confirms the PD85035-E as the primary functional equivalent within the same product family. No other specific substitute part numbers are explicitly verified in the provided source material. Engineers should consult STMicroelectronics for current active replacements compatible with the PowerSO-10RF footprint.