PD85035C

Overview

The PD85035C is a common source N-channel, enhancement-mode lateral field-effect RF power transistor belonging to the LdmoST plastic family. It utilizes ST’s LDMOS technology and is housed in the PowerSO-10RF package, which is JEDEC approved for high-power SMD applications. The device operates at 13.6 V in common source mode with frequencies up to 1 GHz. Key electrical parameters include an output power (POUT) of 35 W and a gain of 14.9 dB measured at 870 MHz under 13.6 V supply conditions.

Feature Summary

• Common source configuration designed for high gain and broadband commercial and industrial applications.
• Superior linearity performance suitable for car mobile radio systems.
• ESD protection included within the design.
• Compliant with the 2002/95/EC European directive.

Applications

• Car mobile radio
• Broadband commercial applications
• Industrial applications

Procurement Notes

Verify the exact suffix against official documentation, as 'PD85035C' may represent a specific tape-and-reel variant or a legacy designation distinct from the standard 'PD85035-E'. Confirm RoHS compliance status and ensure the ordering quantity aligns with manufacturer packaging constraints. Cross-reference the datasheet revision to guarantee compatibility with current assembly guidelines.

Selection Notes

Select this component for designs requiring 35 W output power at 870 MHz with 14.9 dB gain. Ensure the circuit supports a 13.6 V common source supply. Verify that the application environment accommodates the thermal requirements of the PowerSO-10RF package. Consult application note AN1294 for specific mounting recommendations to optimize RF performance and reliability.

Part Context

This part belongs to the LdmoST plastic family of N-channel enhancement-mode lateral MOSFETs. It represents ST's integration of advanced LDMOS technology into a true SMD plastic RF power package. The PowerSO-10RF package is specifically optimized for RF needs, offering excellent RF performance and ease of assembly while maintaining high reliability standards.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided reference material. Evaluate alternative RF power transistors based on matching POUT, gain, frequency range, and package dimensions. Verify thermal resistance and biasing requirements before implementing any cross-brand substitution.