PD85035STR1-E

Overview

The PD85035STR1-E is an N-channel enhancement-mode lateral field-effect RF power transistor from STMicroelectronics, utilizing LDMOS technology. It operates at 13.6 V in common source mode with frequencies up to 1 GHz. The device delivers a POUT of 35 W with 14.9 dB gain at 870 MHz. It is housed in the PowerSO-10RF plastic package, which is JEDEC approved and optimized for RF performance and assembly ease.

Feature Summary

• Common source configuration with excellent thermal stability
• High linearity performance suitable for car mobile radio applications
• ESD protection integrated within the design

Applications

• Car mobile radio systems
• Broadband commercial applications
• Industrial applications

Procurement Notes

Verify component authenticity through authorized STMicroelectronics distributors or certified partners. Check datasheet revisions for technical updates. Confirm RoHS compliance status as per directive 2002/95/EC. Ensure storage conditions meet semiconductor handling standards to prevent ESD damage prior to installation.

Selection Notes

Select this component for designs requiring high gain and linearity in the HF to 1 GHz range. The PowerSO-10RF package facilitates surface mount assembly. Consider the 13.6 V operating voltage and 35 W output power requirements when designing matching networks and thermal management solutions for the target application.

Part Context

This part belongs to the PD85035-E family of RF power transistors. It shares core specifications with variants like the PD55035STR1-E but differs in specific operating voltages and gain characteristics. The STR1 suffix typically indicates tape and reel packaging for automated manufacturing processes.

Replacement Considerations

Direct substitutes are not explicitly listed in public documentation. Evaluate similar LDMOS devices from STMicroelectronics such as the PD55035STR1-E for voltage compatibility. Verify pinout and package dimensions match the PowerSO-10RF footprint before replacing.