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The PH2226-110M is an NPN silicon microwave power transistor designed for radar pulsed power applications. It operates in the S-band frequency range of 2.25 to 2.55 GHz, delivering 110 watts of output power under specified conditions. The device supports a 100 microsecond pulse width with a 10 percent duty cycle. Key electrical characteristics include a maximum collector current of 15 amperes and a maximum operating temperature of 200 degrees Celsius. It utilizes a hermetically sealed metal-ceramic flange mount package with two terminals.
Verify component authenticity through authorized MACOM Technology Solutions channels or certified distributors. Request original manufacturer datasheets and compliance documentation to confirm RoHS status and hermetic sealing integrity. Ensure storage conditions maintain the reliability of the metal-ceramic package before installation.
Select this component for high-power S-band radar applications requiring robust pulsed performance. Confirm that the system design accommodates the common base topology and internal impedance matching. Evaluate thermal management requirements given the 200-degree Celsius maximum operating temperature limit and flange mount packaging style.
This part belongs to the MACOM family of discrete silicon microwave power transistors. These components are engineered for high-reliability defense and aerospace environments. The product line emphasizes ruggedness and consistent performance in demanding pulsed power scenarios across various frequency bands.
Publicly confirmed substitute part numbers are not available in verified sources. Cross-reference only with official MACOM engineering approvals to ensure compatibility with existing circuit designs and thermal constraints.