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Product Detailed Parameters
- Description：RF TRANS NPN 60V
- Series：-
- Mfr：MACOM Technology Solutions
- Package：Tray
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：60V
- Frequency - Transition：-
- Noise Figure (dB Typ @ f)：-
- Gain：9.2dB
- Power - Max：70W
- DC Current Gain (hFE) (Min) @ Ic, Vce：-
- Current - Collector (Ic) (Max)：4A
- Operating Temperature：200°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The PH2729-25M is an NPN silicon microwave power transistor designed for radar pulsed applications. It operates in the 2.7 to 2.9 GHz frequency range with a 100µs pulse width and 10% duty cycle. The device features a common base configuration, broadband Class C operation, and internal input/output impedance matching. Key electrical specifications include a collector-emitter breakdown voltage of 60V, output power of 25W, power gain of 9.2dB, and collector efficiency of 45%. It utilizes a hermetic metal/ceramic package and RoHS compliant gold metallization.
Feature Summary
- High efficiency inter-digitized geometry
- Diffused emitter ballasting resistors
- Internal input and output impedance matching
Applications
- Radar pulsed power systems
Procurement Notes
Verify component authenticity by cross-referencing the manufacturer part number with official MACOM documentation. Confirm that the physical package matches the hermetic metal/ceramic specification. Ensure compliance with RoHS standards as stated in the datasheet. Validate thermal resistance ratings against system requirements before procurement.
Selection Notes
Select this component for high-frequency radar applications requiring pulsed power amplification within the 2.7 to 2.9 GHz band. Consider the 60V collector-emitter breakdown voltage and 36V operating condition when designing bias circuits. Evaluate the thermal resistance of 1.25°C/W for adequate heat dissipation in the intended enclosure environment.
Part Context
This component belongs to the PH2729 series of radar pulsed power transistors manufactured by M/A-COM Technology Solutions Inc. The series includes variants with different power outputs and frequency ranges, such as the PH2729-110M and PH2729-65M. These devices share similar architectural features like common base configuration and internal impedance matching tailored for microwave radar systems.
Replacement Considerations
PH2729-110M
FAQ
What is the maximum collector-emitter breakdown voltage?
The maximum collector-emitter breakdown voltage (BVCES) is 60V.
Does the device require external matching networks?
No, the PH2729-25M includes internal input and output impedance matching.
What is the specified load mismatch tolerance?
The device supports a load mismatch VSWR-Tolerance of up to 3:1.
