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The PH2729-65M is an RF power bipolar transistor manufactured by MACOM Technology Solutions. It is a single-element, NPN silicon device designed for S Band applications. The component operates within the 2.70 to 2.90 GHz frequency range and delivers 65W of output power with a collector voltage of 36V. It utilizes a hermetically sealed metal/ceramic flange mount package (R-CDFM-F2) with two terminals. The maximum operating temperature reaches 200 °C, and it complies with RoHS standards.
Verify the specific ordering suffix and revision level against the manufacturer's current datasheet before procurement. Confirm that the hermetic seal integrity meets project requirements. Ensure thermal management solutions accommodate the flange mount style and maximum junction temperature limits specified in the official documentation.
Select this component when a high-efficiency, broadband Class C amplifier is required for S Band radar or military applications. The common base configuration simplifies impedance matching networks. Verify that the 36V collector voltage rating aligns with the system power supply constraints and that the 100µs pulse capability matches the duty cycle requirements.
This part belongs to the PH2729 series of NPN silicon microwave power transistors from MACOM. Other variants in the family include the PH2729-110M and PH2729-130M, which offer higher power outputs but share similar architectural features such as the hermetic metal/ceramic package and internal matching capabilities.
Publicly confirmed substitute part numbers are not available in the provided documentation. Engineering changes should be validated against MACOM's Product Change Notification (PCN) records to ensure compatibility.