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Product Detailed Parameters
- Description：RF TRANS NPN 60V
- Series：-
- Mfr：MACOM Technology Solutions
- Package：Tray
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：60V
- Frequency - Transition：-
- Noise Figure (dB Typ @ f)：-
- Gain：8.5dB
- Power - Max：5W
- DC Current Gain (hFE) (Min) @ Ic, Vce：-
- Current - Collector (Ic) (Max)：750mA
- Operating Temperature：200°C (TJ)
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The PH3135-5S is a radar pulsed power transistor manufactured by MACOM Technology Solutions. It operates in the 3.1 to 3.5 GHz frequency range with a nominal output power of 5W under 2µs pulse and 10% duty cycle conditions. The device utilizes an NPN silicon microwave structure in a common base configuration. Key electrical specifications include a collector-emitter breakdown voltage (BV_CES) of 60V, a maximum collector current of 0.75A, and a thermal resistance (R_TH(JC)) of 3.5°C/W. It features internal input and output impedance matching and is housed in a hermetic metal/ceramic package.
Feature Summary
- High efficiency inter-digitized geometry for broadband Class C operation
- Internal input and output impedance matching
- Diffused emitter ballasting resistors
- Hermetic metal/ceramic package
Applications
- Radar pulsed power systems
- Microwave communication transmitters
- Broadband RF signal generation
Procurement Notes
Verify component authenticity through authorized MACOM distributors or direct manufacturer channels. Confirm RoHS compliance status and check for specific lot traceability requirements relevant to aerospace or defense procurement standards. Ensure storage conditions adhere to the specified temperature ranges to maintain junction integrity before installation.
Selection Notes
Select this component for applications requiring 5W output at 3.1-3.5 GHz with strict pulse constraints. Evaluate thermal management capabilities against the 3.5°C/W junction-to-case resistance. Consider the common base topology and internal matching when designing input/output networks. Verify that the 60V collector-emitter voltage rating exceeds peak operational voltages.
Part Context
This part belongs to the M/A-COM radar pulsed power transistor family, designed for high-efficiency microwave applications. It shares architectural similarities with other PH series devices but is distinct in its specific power and frequency parameters. The product line emphasizes robust construction for demanding pulsed environments.
Replacement Considerations
Direct substitutes are not explicitly listed in the provided documentation. Engineering evaluation of alternative MACOM PH series transistors or comparable Si NPN devices with similar V_CES and P_OUT ratings is required. Impedance matching networks may need redesign if substituting with non-matched components.
FAQ
What is the recommended operating pulse width for the PH3135-5S?
The datasheet specifies performance metrics based on a 2µs pulse width with a 10% duty cycle.
Does the PH3135-5S include external matching components?
Yes, the device features internal input and output impedance matching to simplify circuit design.
What is the maximum junction temperature allowed?
The absolute maximum rating for junction temperature (T_J) is 200°C.
