PH9130AL,115

$0.23

Description：MOSFET
Series：-

SKU:be21cc8d0ea3 Category: FET, MOSFET Arrays Brand: Nexperia USA Inc.

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET
Series：-
Mfr：Nexperia USA Inc.
Package：Bulk,Bulk
Technology：-
Configuration：-
FET Feature：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Input Capacitance (Ciss) (Max) @ Vds：-
Power - Max：-
Operating Temperature：-
Mounting Type：-
Package / Case：-
Supplier Device Package：-
Grade：-
Qualification：-

Download product information

PH9130AL,115

Overview

The PH9130AL,115 is an N-channel enhancement mode MOSFET manufactured by Nexperia. It is housed in a SOT669 (LFPAK) surface-mount package designed for efficient thermal dissipation. The device features a drain-source breakdown voltage of 30 V and supports a continuous drain current of 350 mA. Key electrical characteristics include a maximum on-resistance of 1.4 Ohms and a gate-source voltage rating of ±8 V. It operates within a temperature range of -55 °C to +150 °C junction temperature.

Feature Summary

Integrated heat sink pad structure for effective thermal transfer from the die to the printed circuit board.
Low on-state resistance to minimize conduction losses during operation.
Enhancement mode N-channel architecture suitable for low-side switching applications.

Applications

Power management circuits requiring compact footprint solutions
Load switching in portable electronic devices
General-purpose low-voltage power control

Procurement Notes

Verify the specific suffix against official Nexperia documentation to confirm pinout compatibility and tape-and-reel specifications. Ensure that the ordering part number matches the exact thermal and electrical requirements for the target application. Cross-reference datasheet revisions to confirm material compliance status before finalizing procurement orders.

Selection Notes

Select this component when a balance between moderate current handling and superior thermal performance is required in a small outline package. The LFPAK housing allows for higher power density compared to standard SOT-323 alternatives. Evaluate the thermal resistance capabilities relative to the expected duty cycle and ambient operating conditions.

Part Context

This component belongs to the Nexperia MOSFET portfolio utilizing silicon technology. It is distinct from the PDTC143EU digital transistor and the NX7002AKW single N-channel MOSFET found in similar SC-70 packages. The PH9130AL utilizes the SOT669 form factor, differentiating it from the BC857AW PNP bipolar junction transistor and the PBSS4021NX high-current NPN transistor.