PHD13003C,412

Single Bipolar Transistors Overview

The PHD13003C,412 is a high voltage, high speed planar passivated NPN power switching transistor manufactured by WeEn Semiconductors. It features an integrated anti-parallel emitter-collector diode and is housed in a SOT54 (TO-92) plastic package. Key electrical parameters include a collector-emitter voltage (VCEO) of 400 V, a collector-base voltage (VCBO) of 700 V, a continuous collector current (IC) of 1.5 A, and a total power dissipation (Ptot) of 2.1 W. The maximum junction temperature (Tj max) is rated at 150 °C. The component carries industrial qualification.

Single Bipolar Transistors Feature Summary

• High voltage capability with 400 V collector-emitter breakdown
• Integrated anti-parallel emitter-collector diode for circuit protection
• High-speed planar passivated NPN construction
• Industrial qualification for robust performance

Single Bipolar Transistors Applications

• Power supply units
• General purpose power switching applications

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix to confirm packaging configuration. The PHD13003C,412 variant utilizes bulk pack straight leads in a TO-92 package. Confirm RoHS compliance and lead-free status through official chemical content documentation. Ensure the industrial qualification level meets the target application requirements before finalizing procurement specifications.

Single Bipolar Transistors Selection Notes

Select this component for applications requiring high voltage isolation and fast switching speeds within a standard through-hole form factor. The integrated anti-parallel diode simplifies circuit design by eliminating external components. Verify that the 1.5 A current rating and 2.1 W power dissipation are sufficient for the thermal management strategy employed in the final assembly.

Single Bipolar Transistors Part Context

This device belongs to the 13003 series of high voltage NPN transistors produced by WeEn Semiconductors. The series is designed for general-purpose power switching tasks. The PHD13003C differs from variants like PHE13003C by including an integrated anti-parallel diode, whereas other versions may lack this feature while maintaining similar electrical ratings and package dimensions.

Single Bipolar Transistors Replacement Considerations

Direct substitutes include the PHE13003C if the integrated diode is not required. Other generic 13003-series transistors may serve as functional replacements provided they meet the 400 V VCEO and 1.5 A IC specifications.