PHE13003C,412

Single Bipolar Transistors Overview

The PHE13003C,412 is a high-voltage NPN power switching transistor manufactured by WeEn Semiconductors. It utilizes a planar passivated silicon structure housed in a SOT54 (TO-92) plastic package with straight leads for bulk packing. Key electrical ratings include a collector-emitter voltage of 400 V and a collector-base voltage of 700 V. The device supports a maximum continuous collector current of 1.5 A and a total power dissipation of 2.1 W at an ambient temperature of 25°C. It features a minimum DC current gain (hFE) of 10 and operates up to a maximum junction temperature of 150°C.

Single Bipolar Transistors Feature Summary

• High voltage capability with 700 V collector-base breakdown
• Fast switching performance suitable for high-frequency applications
• Planar passivated construction for enhanced reliability

Single Bipolar Transistors Applications

• Compact fluorescent lamps (CFL)
• Low power electronic lighting ballasts
• Off-line self-oscillating power supplies for battery charging

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix

Single Bipolar Transistors Selection Notes

Select this component for designs requiring robust high-voltage handling in compact through-hole configurations. The TO-92 package limits thermal dissipation compared to larger packages, making it suitable for low-to-medium power applications. Ensure circuit design accounts for the 1.5 A current limit and 2.1 W power dissipation constraints under expected operating temperatures.

Single Bipolar Transistors Part Context

This part belongs to the PHE13003 series of NPN power transistors from WeEn Semiconductors, formerly associated with NXP Semiconductors product lines. The series is characterized by high-speed switching and high-voltage tolerance, targeting consumer electronics and lighting markets. The PHE13003C variant specifically denotes the standard version within this family, distinct from variants like the PHD13003C which includes integrated diodes.

Single Bipolar Transistors Replacement Considerations

Direct substitutes include the BUJ302AX and other high-voltage NPN transistors in TO-92 packages. Verify pinout compatibility and ensure replacement parts meet or exceed the 700 V VCBO and 1.5 A IC requirements.