PHKD13N03LT,118

$0.30

Description：MOSFET 2N-CH 30V 10.4A 8SO
Series：TrenchMOS™

SKU:6b2509c187c1 Category: FET, MOSFET Arrays Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 10.4A 8SO
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：10.4A
Rds On (Max) @ Id, Vgs：20mOhm @ 8A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：10.7nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds：752pF @ 15V
Power - Max：3.57W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SO
Grade：-
Qualification：-

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PHKD13N03LT,118

Overview

The PHKD13N03LT is a dual logic level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology in an SO8 plastic package. It features a drain-source voltage of 30 V and a continuous drain current of 10.4 A at 25 °C. The device exhibits a typical on-state resistance of 17 mΩ at VGS=10V and ID=8A, with a total gate charge of 10.7 nC. Thermal performance includes a junction-to-solder point resistance of 35 K/W and a maximum power dissipation of 3.57 W.

Feature Summary

Low conduction losses achieved through minimized on-state resistance
Simplified gate drive requirements enabled by low gate charge
High-frequency operation capability supported by fast switching characteristics

Applications

DC-to-DC converters
Lithium-ion battery applications
Notebook computers
Portable equipment

Procurement Notes

Verify the specific ordering suffix against official Nexperia documentation to confirm packaging configuration. Confirm that the component meets the intended computing, communications, consumer, or industrial application requirements. Ensure design parameters remain within the absolute maximum ratings defined in the product data sheet to prevent permanent damage.

Selection Notes

Select this component for designs requiring dual N-channel FETs in compact surface-mount packages. Evaluate thermal management strategies based on the specified junction-to-ambient resistance values. Consider the logic-level gate drive compatibility for direct interfacing with standard control signals in portable and computing systems.

Part Context

This device belongs to Nexperia's TrenchMOS family, designed for high-efficiency power switching. It integrates two independent N-channel MOSFETs into a single SO8 package, optimizing board space for portable electronics. The technology focuses on reducing both conduction and switching losses compared to conventional planar structures.

Replacement Considerations

Consult official Nexperia substitution guides for verified alternatives. Single-channel equivalents like the PHK13N03LT require circuit redesign to accommodate separate components. Verify pinout compatibility and electrical parameter overlaps before implementing any substitute part number.