PHKD6N02LT,518

Overview

The PHKD6N02LT is a dual N-channel TrenchMOS logic level FET in an SO8 plastic package. It features a drain-source voltage of 20 V and a continuous drain current of 10.9 A at 25 °C. The typical on-state resistance is 25 mΩ at VGS = 2.5 V. Total power dissipation is 4.17 W. Gate-drain charge is 6 nC. Junction temperature ranges from -55 to 150 °C.

Feature Summary

• Low conduction losses due to low on-state resistance
• Suitable for logic level gate drive sources

Applications

• Battery chargers
• DC-to-DC convertors
• Notebook computers
• Portable equipment

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging configuration. Confirm that the component meets all required environmental standards for the intended application environment before finalizing procurement decisions.

Selection Notes

Select this component for applications requiring dual N-channel enhancement mode FETs with logic level compatibility. Ensure the design accommodates the 20 V drain-source voltage limit and the thermal constraints defined by the junction-to-solder point resistance specifications.

Part Context

This device utilizes Nexperia's TrenchMOS technology within a standard SOT96-1 (SO8) plastic small outline package. It is designed specifically for computing, communications, consumer, and industrial applications as stated in the product profile.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.

FAQ

What is the maximum gate-source voltage rating?

The absolute maximum gate-source voltage is ±12 V.

Is this component automotive qualified?

No, the data sheet explicitly states it is not suitable for automotive use unless expressly stated otherwise.

What is the peak drain current capability?

The peak drain current is 44 A under pulsed conditions with a pulse width of 100 µs or less.