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Product Detailed Parameters
- Description：NEXPERIA PHP225 - SMALL SIGNAL F
- Series：*
- Mfr：Nexperia USA Inc.
- Package：Bulk
- Technology：-
- Configuration：-
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The PHP225,118 is a dual P-channel MOSFET array manufactured by Nexperia. It features two independent P-channel field-effect transistors housed in an 8-SO package. The device is designed for intermediate level applications with a maximum drain-source voltage of 30V and a continuous drain current of 2.3A per channel. Total power dissipation is rated at 2W. The component utilizes silicon technology and complies with RoHS standards.
Feature Summary
- Dual configuration providing two independent P-channel MOSFETs within a single compact package
- Optimized for intermediate level switching applications requiring moderate current handling
- Surface-mount construction suitable for automated assembly processes
Applications
- Intermediate level signal switching circuits
- Power management modules requiring dual P-channel control
- General purpose electronic equipment utilizing surface-mount arrays
Procurement Notes
Verify the specific ordering code suffix to ensure compatibility with required packaging formats. Confirm that the procurement source provides official documentation from Nexperia or authorized distributors. Check for any recent product change notifications regarding pinout or electrical characteristics before finalizing orders.
Selection Notes
Select this component when a dual P-channel solution is required for intermediate voltage levels up to 30V. Ensure the application current does not exceed 2.3A per channel under specified thermal conditions. Consider the 8-SO package dimensions for PCB layout constraints compared to alternative transistor arrays.
Part Context
This part belongs to Nexperia's portfolio of discrete semiconductor devices, specifically within the FET and MOSFET arrays category. It serves as a complementary option to NPN/NPN or mixed polarity arrays, offering dedicated P-channel performance for logic-level or power-switching tasks in consumer and industrial electronics.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Verify cross-reference data through official Nexperia channels or authorized distributor databases for equivalent dual P-channel MOSFET arrays.
