PHPT610030NK-QX

Overview

The PHPT610030NK-Q is an NPN/NPN high power double bipolar transistor housed in a SOT1205 (LFPAK56D) surface-mounted package. It features a collector-emitter voltage (VCEO) of 100 V and a continuous collector current (IC) of 3 A per transistor. The device supports junction temperatures up to 175 °C and is qualified under the AEC-Q101 standard for automotive use. Key electrical characteristics include a typical collector-emitter saturation resistance (RCEsat) of 75 mΩ at IC = 3 A, and a transition frequency (fT) of 140 MHz. Total power dissipation reaches 25 W on an FR4 PCB with a 6 cm² collector pad.

Feature Summary

• High thermal power dissipation capability suitable for demanding environments
• Operational stability at elevated temperatures up to 175 °C
• Reduced printed-circuit board requirements compared to DPAK transistors
• AEC-Q101 qualification for automotive application reliability

Applications

• Motor control systems
• Power management circuits
• Load switching applications
• Linear mode voltage regulators
• Relay replacement designs

Procurement Notes

Verify the complete part number including the suffix against official Nexperia documentation to ensure correct packaging and tape-and-reel specifications. Confirm that the LFPAK56D footprint matches your PCB design guidelines. Check for any recent revision history updates that may affect pinning or marking codes before finalizing procurement orders.

Selection Notes

Select this component when high current handling and robust thermal performance are required in a compact surface-mount form factor. The dual NPN configuration allows for efficient bridge or push-pull circuit topologies. Ensure adequate copper area on the PCB to utilize the full 25 W power dissipation rating and maintain junction temperature within safe operating limits during peak load conditions.

Part Context

This device belongs to Nexperia's portfolio of high-power discrete semiconductors designed for industrial and automotive sectors. The LFPAK56D package provides superior thermal conductivity compared to traditional plastic packages, enabling higher power density in space-constrained designs. It complements other Nexperia bipolar transistors by offering enhanced efficiency and reduced heat generation for modern power electronics.

Replacement Considerations

Direct substitutes must match the NPN/NPN dual configuration, 100 V rating, 3 A current capacity, and SOT1205 package. Verify thermal resistance and pinout compatibility to ensure seamless integration without PCB redesign.