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PJF60R290E_T0_00001 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Panjit International Inc.. Its product description is 600V N-CHANNEL SUPER JUNCTION MO. Review the specifications below when checking this part for your BOM.
The PJF60R290E is a 600V N-Channel Super Junction MOSFET manufactured by Panjit International Inc. It features a maximum continuous drain current of 15A at TC=25°C and a typical on-resistance (RDS(on)) of 0.25Ω at VGS=10V and ID=6.5A. The device utilizes an ITO-220AB-F package with a thermal resistance (RθJC) of 2.08°C/W. Electrical characteristics include a gate threshold voltage of 3V, total gate charge of 40nC, and a reverse recovery time of 441ns.
Verify the specific suffix T0_00001 corresponds to the ITO-220AB-F package variant rather than the standard TO-220AB. Confirm compliance requirements against the latest datasheet revision as Panjit reserves the right to modify content without notification. Ensure ordering documentation matches the halogen-free marking version specified in the packaging information section.
Select this component when a 600V rating and 15A continuous current capability are required within an ITO-220AB-F footprint. Consider the 0.25Ω RDS(on) for conduction loss calculations at 6.5A. Evaluate the 2.08°C/W junction-to-case thermal resistance for heatsink design purposes compared to the higher thermal resistance of alternative packages.
This part belongs to the PJP/PJF 600V Super Junction MOSFET series produced by Panjit International Inc. The PJF designation specifically identifies the ITO-220AB-F package configuration, distinguishing it from the standard TO-220AB form factor found in the PJP counterpart. Both share identical electrical performance metrics.
The PJP60R290E_T0_00001 serves as a direct functional equivalent with identical electrical specifications but utilizes a TO-220AB package instead of the ITO-220AB-F.
The maximum pulsed drain current (IDM) is rated at 30A.
Yes, the single pulse avalanche energy (EAS) is rated at 288mJ under specified test conditions.
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