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The PJL9808_R2_00001 is a dual N-channel enhancement mode MOSFET manufactured by Panjit International Inc. It features a drain-source voltage (Vds) of 30 V and a continuous drain current (Id) of 8 A. The device exhibits a maximum on-resistance (Rds(on)) of 19 mOhms at a gate-source voltage (Vgs) of 10 V, with a gate charge (Qg) of 4.3 nC. The threshold voltage (Vgs(th)) is specified at 2.5 V. Power dissipation reaches 2 W at ambient temperature and 83 W at case temperature. Operating temperatures range from -55 °C to +150 °C junction temperature. The component utilizes an SOP-8 surface-mount package.
Verify the specific ordering suffix and manufacturer part number against official Panjit documentation to ensure exact electrical and mechanical compatibility. Confirm RoHS compliance status and check for any product change notifications or lifecycle updates prior to procurement to avoid obsolescence risks during production.
Select this component when a dual N-channel topology is required with a 30 V rating and approximately 8 A current capacity. Ensure the application voltage and current demands remain within the specified absolute maximum ratings. Verify that the SOP-8 footprint aligns with the PCB layout constraints and thermal management requirements of the target design.
This part belongs to Panjit's lineup of silicon N-channel MOSFETs designed for general-purpose switching. It serves as a dual-channel alternative to single devices, reducing board space. The SOP-8 package provides improved thermal handling compared to smaller SOT packages, making it suitable for moderate power applications in consumer and industrial electronics.
Publicly confirmed substitute part numbers are not available in the provided source material. Verify pinout compatibility and electrical parameters before considering any cross-reference components from other manufacturers.