PJL9809_R2_00001

PJL9809_R2_00001

$0.17
  • Description:MOSFET 2P-CH 30V 5.3A 8SOP
  • Series:-

SKU:09a0b5dac3cc Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2P-CH 30V 5.3A 8SOP
  • Series:-
  • Mfr:Panjit International Inc.
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 P-Channel (Dual)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:5.3A (Ta)
  • Rds On (Max) @ Id, Vgs:30mOhm @ 4A, 10V
  • Vgs(th) (Max) @ Id:2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:7.8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:870pF @ 15V
  • Power - Max:1.25W (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SOP
  • Grade:-
  • Qualification:-

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PJL9809_R2_00001

Overview

The PJL9809_R2_00001 is a dual P-channel enhancement mode MOSFET manufactured by Panjit International Inc. It operates with a drain-source voltage of -30 V and a continuous drain current of -5.3 A at 25°C. The device features an on-state resistance of 30 mΩ at VGS=-10V and ID=-4A, or 45 mΩ at VGS=-4.5V and ID=-2A. Total gate charge is typically 7.8 nC. It utilizes an SOP-8 package with a power dissipation rating of 1.25 W at 25°C and supports junction temperatures from -55°C to +150°C.

Feature Summary

  • Dual configuration integrating two independent P-channel MOSFETs within a single SOP-8 package for space-efficient circuit design.
  • Optimized switching performance characterized by low gate charge and high dv/dt capability to minimize switching losses.
  • Compliant with EU RoHS2.0 directives and manufactured using halogen-free green molding compound.

Applications

  • Low-side load switching in consumer electronics
  • Power management circuits requiring compact dual-channel solutions
  • General-purpose switching applications

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging details. Confirm that the component meets required environmental standards such as RoHS2.0 compliance. Ensure thermal management strategies align with the specified power dissipation limits and thermal resistance values provided in the datasheet.

Selection Notes

Select this component when a dual P-channel configuration is required in a small footprint. Evaluate the on-resistance requirements against the available drive voltages (-4.5V or -10V). Consider the thermal resistance and power dissipation capabilities relative to the expected operating temperature and duty cycle.

Part Context

This part belongs to Panjit's lineup of dual enhancement mode MOSFETs designed for surface-mount applications. The SOP-8 package provides a balance between electrical performance and board space efficiency. It serves as a specialized alternative to discrete single-channel solutions where dual functionality is needed.

Replacement Considerations

No public substitute part numbers are documented for this specific model. Verify pinout compatibility and electrical parameters if considering alternatives from other manufacturers.

FAQ

What is the maximum pulsed drain current?

The maximum pulsed drain current (IDM) is rated at -24 A, subject to pulse width limitations of less than 300us and a duty cycle under 2%.

How does the on-resistance vary with gate voltage?

The typical on-resistance is 26 mΩ at VGS=-10V and ID=-4A, increasing to a typical value of 36 mΩ at VGS=-4.5V and ID=-2A.

What is the reverse transfer capacitance?

The typical reverse transfer capacitance (Crss) is 93 pF, measured at VDS=-15V, VGS=0V, and f=1.0MHz.

PJL9809_R2_00001PJL9809_R2_00001
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