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The PJL9809_R2_00001 is a dual P-channel enhancement mode MOSFET manufactured by Panjit International Inc. It operates with a drain-source voltage of -30 V and a continuous drain current of -5.3 A at 25°C. The device features an on-state resistance of 30 mΩ at VGS=-10V and ID=-4A, or 45 mΩ at VGS=-4.5V and ID=-2A. Total gate charge is typically 7.8 nC. It utilizes an SOP-8 package with a power dissipation rating of 1.25 W at 25°C and supports junction temperatures from -55°C to +150°C.
Verify the specific ordering suffix against official documentation to confirm packaging details. Confirm that the component meets required environmental standards such as RoHS2.0 compliance. Ensure thermal management strategies align with the specified power dissipation limits and thermal resistance values provided in the datasheet.
Select this component when a dual P-channel configuration is required in a small footprint. Evaluate the on-resistance requirements against the available drive voltages (-4.5V or -10V). Consider the thermal resistance and power dissipation capabilities relative to the expected operating temperature and duty cycle.
This part belongs to Panjit's lineup of dual enhancement mode MOSFETs designed for surface-mount applications. The SOP-8 package provides a balance between electrical performance and board space efficiency. It serves as a specialized alternative to discrete single-channel solutions where dual functionality is needed.
No public substitute part numbers are documented for this specific model. Verify pinout compatibility and electrical parameters if considering alternatives from other manufacturers.
The maximum pulsed drain current (IDM) is rated at -24 A, subject to pulse width limitations of less than 300us and a duty cycle under 2%.
The typical on-resistance is 26 mΩ at VGS=-10V and ID=-4A, increasing to a typical value of 36 mΩ at VGS=-4.5V and ID=-2A.
The typical reverse transfer capacitance (Crss) is 93 pF, measured at VDS=-15V, VGS=0V, and f=1.0MHz.