SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The PJL9836A_R2_00001 is a dual N-channel enhancement mode MOSFET manufactured by Panjit International Inc. It features a 60V drain-source voltage rating and supports continuous currents of up to 6A at ambient temperature. The device offers low resistive loss and high-speed operation within a compact surface-mount package. Key electrical characteristics include a gate charge of 28 nC and a power dissipation capability of 1.7W at ambient conditions. It operates reliably across a temperature range from -55°C to +150°C, making it suitable for applications requiring efficient switching in small form factors.
Verify the specific ordering suffix and tape/reel specifications directly with Panjit International Inc. or authorized distributors to ensure compatibility with automated assembly processes. Confirm that the component status aligns with current design requirements, as availability may vary. Request official datasheets and quality certifications prior to finalizing procurement orders to guarantee adherence to technical standards.
Select this component when a dual N-channel MOSFET with a 60V rating is required for space-constrained designs. Consider its 1.7W power dissipation limit and thermal performance relative to the application's heat sink requirements. Evaluate the 28 nC gate charge against driving capabilities to ensure adequate switching speed without excessive drive current demands.
This part belongs to Panjit's series of low-profile MOSFET arrays designed for modern electronics. It utilizes advanced trench process technology to achieve enhanced performance metrics compared to standard planar devices. The dual configuration allows for complementary switching arrangements in a single footprint, reducing board space and interconnection complexity in portable and industrial equipment.
Consult official substitution lists from Panjit International Inc. for verified alternatives. Generic cross-references should be validated against pinout compatibility and electrical parameters before implementation.