PJQ2800_R1_00001

$0.74

Description：MOSFET 2N-CH 20V 5.2A 6DFN
Series：-

SKU:20abf905481c Category: FET, MOSFET Arrays Brand: Panjit International Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 20V 5.2A 6DFN
Series：-
Mfr：Panjit International Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：5.2A (Ta)
Rds On (Max) @ Id, Vgs：32mOhm @ 5.2A, 4.5V
Vgs(th) (Max) @ Id：900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs：6.3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：515pF @ 10V
Power - Max：1.45W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-VDFN Exposed Pad
Supplier Device Package：DFN2020-6L
Grade：-
Qualification：-

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PJQ2800_R1_00001

Overview

The PJQ2800 is a 20V N-Channel Enhancement Mode MOSFET manufactured by Panjit International Inc. in a DFN2020-6L package. It features an advanced trench process technology for ultra-low on-resistance, with RDS(on) values of 32mΩ max at VGS=4.5V/ID=5.2A, 45mΩ max at VGS=2.5V/ID=3.2A, and 65mΩ max at VGS=1.8V/ID=2.0A. The device supports a continuous drain current of 5.2A and a pulsed drain current of 20.8A. Key electrical parameters include a gate threshold voltage (VGS(th)) of 0.9V max, total gate charge (Qg) of 6.3nTyp, input capacitance (Ciss) of 515pFTyp, and power dissipation of 1.45W at TA=25°C. Operating temperature range spans from -55°C to +150°C.

Feature Summary

Advanced Trench Process Technology
High density cell design for ultra low on-resistance
ESD Protected

Applications

Standard use and operation examples as defined by manufacturer documentation

Procurement Notes

Verify the specific ordering suffix and marking code against official distributor listings or direct manufacturer channels before purchase. Confirm that the component meets RoHS 2011/65/EU compliance requirements and halogen-free specifications mandated by IEC61249 Std. Ensure the packaging type matches the required reel size for automated assembly processes.

Selection Notes

Select this component for applications requiring low on-resistance at reduced gate drive voltages such as 1.8V, 2.5V, or 4.5V. Evaluate thermal performance based on the junction-to-ambient resistance of 86°C/W and derating factor of 11.6 mW/°C above 25°C. Consider the package limitations for maximum current ratings when designing heat dissipation strategies.

Part Context

This part belongs to the NFET-20FHMN series of N-Channel Enhancement Mode MOSFETs produced by Panjit. It utilizes silicon technology and is housed in a surface-mount DFN2020-6L case. The product is designed for general-purpose switching applications within the specified voltage and current limits.