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Product Detailed Parameters
- Description：MOSFET 2P-CH 20V 1.5A 8DFN
- Series：-
- Mfr：Panjit International Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：1.5A (Ta)
- Rds On (Max) @ Id, Vgs：325mOhm @ 1.5A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：2.2nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：150pF @ 10V
- Power - Max：1.25W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-WFDFN Exposed Pad
- Supplier Device Package：DFN2020-8
- Grade：-
- Qualification：-
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Overview
The PJQ2888_R1_00001 is a 20V P-Channel Enhancement Mode MOSFET manufactured by Panjit International Inc. It integrates a TVS diode for enhanced protection. The device utilizes advanced trench process technology and offers low on-resistance, with RDS(on) less than 325mΩ at VGS=-4.5V and ID=-1.5A. It features ESD protection rated at 2kV HBM and is housed in a DFN2020-8L package. The component is designed for switch load and PWM applications, complying with EU RoHS directives and utilizing halogen-free green molding compound.
Feature Summary
- Integrated TVS diode for transient voltage suppression
- Advanced trench process technology for low on-resistance
- ESD protection rated at 2kV HBM
- Halogen-free green molding compound compliant with IEC61249
Applications
- Switch load control circuits
- PWM application drivers
- Low voltage power management systems
Procurement Notes
Verify the specific suffix _R1_00001 against official Panjit documentation to confirm reel packaging specifications. Ensure compatibility with DFN2020-8L footprint requirements during PCB layout. Confirm that the integrated TVS functionality meets system surge protection needs without requiring external components.
Selection Notes
Select this component for applications requiring compact integration of P-channel switching and transient protection. The DFN2020-8L package suits space-constrained designs. Verify thermal performance under continuous load conditions given the small form factor. Compare RDS(on) values at specific gate voltages against circuit drive capabilities.
Part Context
This part belongs to Panjit's 20V P-Channel Enhancement Mode MOSFET lineup. It differs from standard MOSFETs by including an integrated TVS diode. The DFN2020-8L package provides a compact solution compared to larger SOT or TO packages. It targets modern portable electronics and automotive low-voltage systems requiring robust ESD and surge protection.
Replacement Considerations
Direct substitutes must match the 20V P-Channel specification, DFN2020-8L package, and integrated TVS feature. Verify pinout compatibility carefully due to the complex package. Check if alternative parts offer comparable RDS(on) and ESD ratings.
