PJQ5846_R2_00001

Overview

The PJQ5846_R2_00001 is a 40V N-Channel Enhancement Mode MOSFET manufactured by Panjit International Inc. It utilizes an advanced trench process technology to achieve low on-resistance and high switching speed. The device is housed in a DFN5060B-8L package, providing efficient thermal performance with a junction-to-case thermal resistance of 3.9°C/W. Key electrical parameters include a maximum continuous drain current of 40A at TC=25°C, a typical RDS(on) of 9mΩ at VGS=10V, and a gate charge of 22nC. It supports an operating junction temperature range from -55°C to 150°C.

Feature Summary

• Advanced trench process technology minimizes on-state resistance while maximizing avalanche ruggedness.
• High switching speed combined with improved dv/dt capability for efficient power management.
• Low reverse transfer capacitance enhances stability in high-frequency applications.
• Compliant with EU RoHS 2.0 standards and utilizes green molding compound per IEC 61249.

Applications

• DC-DC converters
• Power management circuits
• Load switches

Procurement Notes

Verify the specific ordering suffix _R2_00001 against official documentation to confirm packaging details, such as the 3000-piece reel quantity and Q5846 marking. Ensure compliance requirements match project specifications, including halogen-free status and lead-free composition. Confirm that the component's non-automotive classification aligns with the intended application environment before procurement.

Selection Notes

Select this component when a 40V N-Channel MOSFET with low RDS(on) and high current handling is required. The DFN5060B-8L package offers a compact footprint suitable for space-constrained designs. Consider the thermal resistance characteristics and maximum junction temperature limits during circuit layout to ensure reliable operation under varying load conditions.

Part Context

This part belongs to the PJQ series of enhancement mode MOSFETs produced by Panjit International Inc. The series focuses on silicon-based devices optimized for general-purpose power switching applications. The PJQ5846 specifically targets low-voltage, high-current scenarios requiring efficient thermal dissipation and fast switching performance within a surface-mount package.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical parameter margins if considering alternative manufacturers' components for this specific voltage and current rating.

FAQ

What is the maximum pulsed drain current for the PJQ5846?

The maximum pulsed drain current (IDM) is 120A at a case temperature of 25°C, with pulse width less than 300us and duty cycle less than 2%.

Is the PJQ5846 suitable for automotive applications?

No. The manufacturer explicitly states that these products are not designed or authorized for equipment requiring high reliability or relating to human life, such as automotive transportation equipment.

What is the typical gate charge (Qg) for this MOSFET?

The typical total gate charge (Qg) is 22nC, measured at VDS=20V, ID=8A, and VGS=10V.