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Product Detailed Parameters
- Description：MOSFET 2N-CH 40V 8.6A 8DFN
- Series：-
- Mfr：Panjit International Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：8.6A (Ta), 30A (Tc)
- Rds On (Max) @ Id, Vgs：12mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：10nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：1040pF @ 20V
- Power - Max：2W (Ta), 23.8W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerTDFN
- Supplier Device Package：DFN5060B-8
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The PJQ5848-AU_R2_000A1 is a dual N-channel enhancement mode MOSFET manufactured by Panjit International Inc. It features a DFN5060B-8L package and is qualified to AEC-Q101 standards. The device supports a drain-source voltage of 40V and continuous drain currents up to 30A at TC=25°C or 8.6A at TA=25°C. On-state resistance is specified as a maximum of 12mΩ at VGS=10V, ID=12A, and 16mΩ at VGS=4.5V, ID=8A. Thermal characteristics include a junction-to-case resistance of 6.3°C/W and a junction-to-ambient resistance of 73.5°C/W.
Feature Summary
- Dual N-channel configuration with high switching speed and improved dv/dt capability
- Low reverse transfer capacitance for efficient operation
- Qualified for automotive applications under AEC-Q101 standards
- Lead-free construction compliant with EU RoHS 2.0 directives
Applications
- Automotive power management systems
- High-frequency switching circuits
- Power distribution modules requiring low on-resistance
Procurement Notes
Verify the component status before procurement, as distributor records indicate this specific part number may be marked as Not Recommended for New Designs (NRND). Confirm the exact suffix matches the required datasheet revision. Ensure compliance with AEC-Q101 requirements if used in automotive contexts. Check for updated replacement recommendations from the manufacturer.
Selection Notes
Select this component for designs requiring a dual N-channel MOSFET in a compact DFN5060B-8L footprint. Evaluate thermal performance based on the 73.5°C/W junction-to-ambient resistance for ambient temperature conditions. Consider the 12mΩ maximum on-resistance at 10V gate drive for efficiency calculations. Verify that the 40V breakdown voltage aligns with the circuit's maximum operating voltage.
Part Context
This component belongs to the PJQ5848-AU series of dual N-channel enhancement mode MOSFETs produced by Panjit International Inc. The series utilizes silicon technology and is designed for surface-mount applications. The specific model PJQ5848-AU_R2_000A1 corresponds to the standard reel packaging format containing 3000 pieces per 13-inch reel.
Replacement Considerations
Distributor data lists PJQ5948V-AU_R2_002A1 as a parameter-equivalent alternative. Both devices share similar 40V ratings and dual N-channel configurations. Verify pinout compatibility and specific electrical parameters such as on-resistance and gate charge when substituting.
