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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 7A 8DFN
- Series：-
- Mfr：Panjit International Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：7A (Ta), 40A (Tc)
- Rds On (Max) @ Id, Vgs：17mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：13.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：1574pF @ 25V
- Power - Max：1.7W (Ta), 56W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerTDFN
- Supplier Device Package：DFN5060B-8
- Grade：-
- Qualification：-
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Overview
The PJQ5866A_R2_00001 is a dual N-channel enhancement mode MOSFET manufactured by Panjit International Inc. It features a DFN5060B-8L package and operates with a drain-source voltage of 60V. The device supports a continuous drain current of 40A at 25°C case temperature, with a maximum on-state resistance of 17mΩ at VGS=10V and ID=20A. Thermal characteristics include a junction-to-case resistance of 2.2°C/W and a single pulse avalanche energy rating of 45mJ. The component complies with EU RoHS 2.0 standards and utilizes green molding compound.
Feature Summary
- Low on-state resistance optimized for high-efficiency power switching applications
- Enhanced dv/dt capability to improve performance in fast-switching environments
- High switching speed supported by low reverse transfer capacitance
Applications
- DC-DC converter circuits requiring efficient power management
- Motor driver stages utilizing N-channel topology
- Power supply modules designed for medium-voltage operation
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging details. Ensure compliance with environmental directives such as EU RoHS 2.0 requirements before integration. Confirm that the DFN5060B-8L footprint matches the target PCB layout specifications. Validate thermal management strategies based on the provided junction-to-case resistance values.
Selection Notes
Select this component when a 60V N-channel MOSFET with low RDS(on) is required for space-constrained designs. The DFN5060B-8L package offers improved thermal dissipation compared to traditional surface-mount options. Consider the 40A continuous current rating for load requirements and ensure gate drive voltages align with the specified threshold characteristics for optimal performance.
Part Context
This part belongs to the PJQ series of N-channel enhancement mode MOSFETs from Panjit International Inc. The series focuses on providing low on-resistance and high switching speeds for modern power electronics. The PJQ5866A variant specifically targets applications needing robust performance within a compact DFN package format.
Replacement Considerations
Consult official manufacturer substitution lists for verified alternatives. Cross-reference pin configurations and electrical parameters carefully to ensure compatibility.
