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Product Detailed Parameters
- Description：MOSFET 2N-CH 40V 10.5A 8DFN
- Series：-
- Mfr：Panjit International Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：10.5A (Ta), 35A (Tc)
- Rds On (Max) @ Id, Vgs：13.4mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：3.5V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs：9.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：673pF @ 25V
- Power - Max：2.4W (Ta), 32W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerTDFN
- Supplier Device Package：DFN5060B-8
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The PJQ5948V-AU_R2_002A1 is a dual N-channel enhancement mode MOSFET manufactured by Panjit International Inc. It features a 40V drain-source voltage (Vdss) and operates within a junction temperature range of -55°C to 175°C. The device supports a continuous drain current of 10.5A at ambient temperature and 35A at case temperature, with a maximum power dissipation of 2.4W (Ta) or 32W (Tc). Key electrical parameters include a maximum on-resistance (Rds(on)) of 13.4mΩ at 10V gate drive, a gate charge (Qg) of 9.5nC at 10V, and an input capacitance (Ciss) of 673pF at 25V. It is housed in an 8-PowerTDFN (DFN5060B-8) surface-mount package and holds AEC-Q101 automotive qualification.
Feature Summary
- Dual N-channel configuration for efficient half-bridge or synchronous rectification applications
- Automotive-grade reliability certified under AEC-Q101 standards
- Low on-resistance optimized for high-efficiency power switching
- Extended thermal performance supporting high case temperature operation
Applications
- Automotive power distribution systems
- Synchronous rectification in DC-DC converters
- Motor control circuits requiring dual channel switching
- High-side or low-side load switch implementations
Procurement Notes
Verify the specific suffix AU_R2_002A1 against the manufacturer's latest datasheet to confirm pinout and electrical tolerances. Confirm RoHS3 compliance status and AEC-Q101 certification validity directly with Panjit International Inc. prior to integration. Ensure packaging format matches design requirements for automated assembly processes.
Selection Notes
Select this component when a dual N-channel topology is required within a compact DFN5060B-8 footprint. The 40V rating suits low-voltage automotive and industrial bus systems. Evaluate thermal management needs based on the 32W case dissipation limit versus the lower ambient rating. Compare gate charge specifications against driver capabilities to ensure adequate switching speed without excessive drive current demands.
Part Context
This part belongs to Panjit's 30V and 40V Automotive MOSFET product line. It shares the DFN5060B-8 package form factor with other devices in the series but differs in channel count and specific electrical ratings. The PJQ5948 base model designation indicates its position within the manufacturer's N-channel enhancement mode portfolio.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with existing footprints if considering alternative manufacturers. Check for equivalent Rds(on), Qg, and package dimensions before substitution.
