PJS6800_S1_00001

$0.13

Description：MOSFET 2N-CH 30V 3.9A SOT23-6
Series：-

SKU:15ec6fd83faa Category: FET, MOSFET Arrays Brand: Panjit International Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 3.9A SOT23-6
Series：-
Mfr：Panjit International Inc.
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：3.9A (Ta)
Rds On (Max) @ Id, Vgs：48mOhm @ 3.9A, 10V
Vgs(th) (Max) @ Id：1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：11.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：490pF @ 15V
Power - Max：1.25W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：SOT-23-6
Supplier Device Package：SOT-23-6
Grade：-
Qualification：-

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PJS6800_S1_00001

Overview

The PJS6800_S1_00001 is a 30V N-Channel Enhancement Mode MOSFET manufactured by Panjit International Inc. in an SOT-23 6L package. It features a maximum continuous drain current of 3.9A and a pulsed drain current of 15.6A. The device utilizes advanced trench process technology to achieve low on-resistance, with RDS(on) values below 48mΩ at VGS=10V and ID=3.9A. Electrical characteristics include a gate threshold voltage range of 0.4V to 1.2V and a total gate charge of 11.3nC. The component supports an operating junction temperature range from -55°C to 150°C and complies with EU RoHS 2.0 standards.

Feature Summary

Advanced Trench Process Technology for optimized performance
Low On-State Resistance across various gate voltage levels
Designed specifically for switch load and PWM applications

Applications

Switch Load circuits
PWM (Pulse Width Modulation) Applications

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging configuration. The _S1 variant corresponds to a 3K pcs / 7” reel format. Confirm compliance requirements such as RoHS 2.0 and halogen-free status directly with the supplier or datasheet before finalizing procurement orders.

Selection Notes

Select this component when a 30V N-Channel MOSFET with low on-resistance is required for compact designs. Ensure the application operates within the specified continuous drain current limits and thermal constraints. Verify that the gate drive voltage aligns with the low RDS(on) specifications for optimal efficiency in switching applications.

Part Context

This part belongs to the PJS6800 series of N-Channel Enhancement Mode MOSFETs produced by Panjit International Inc. The series is characterized by its use of advanced trench process technology to deliver high performance in small form factors. The SOT-23 6L package provides a compact solution suitable for space-constrained electronic designs requiring efficient power switching capabilities.

Replacement Considerations

Consult the manufacturer's official documentation for confirmed substitute part numbers. Cross-referencing should be performed based on matching electrical parameters, package type, and pinout configurations to ensure functional compatibility without compromising circuit integrity.