PJS6811_S1_00001

Overview

The PJS6811_S1_00001 is a P-Channel Enhancement Mode MOSFET manufactured by Panjit International Inc. It operates with a drain-source voltage of -20 V and a continuous drain current of -2.7 A. The device utilizes advanced trench process technology to achieve low on-resistance, specifically less than 105 mΩ at VGS=-4.5V and ID=-2.7A. Packaged in an SOT-23 6L case, it supports PWM applications and switch loads. The component complies with EU RoHS 2.0 directives and uses halogen-free green molding compound.

Feature Summary

• Advanced Trench Process Technology for optimized performance
• Specially designed for switch load and PWM applications
• Lead-free construction compliant with EU RoHS 2.0 directive
• Green molding compound meeting IEC 61249 standard

Applications

• Switch Load circuits
• PWM Application modules

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm reel size and marking version. Confirm compliance requirements such as RoHS 2.0 and halogen-free status match project specifications. Ensure thermal management aligns with the specified junction-to-ambient resistance limits during operation.

Selection Notes

Select this component based on the required -20 V rating and -2.7 A continuous current capability. Evaluate gate threshold voltage characteristics for compatibility with control logic levels. Consider the SOT-23 6L package constraints for PCB layout and thermal dissipation requirements relative to the 1.25 W power dissipation limit.

Part Context

This part belongs to the PJS6811 series of P-Channel MOSFETs from Panjit International Inc. The series focuses on providing efficient switching solutions for power management applications within compact surface-mount packages. The manufacturer emphasizes reliability through lead-free processes and standardized testing methods.

Replacement Considerations

Consult official cross-reference lists or distributor databases for verified substitutes. Ensure any replacement matches the -20 V voltage rating, -2.7 A current capacity, and SOT-23 6L package dimensions. Verify electrical parameters like RDS(on) and gate charge are compatible with the existing circuit design.

FAQ

What is the maximum pulsed drain current for the PJS6811?

The maximum pulsed drain current (IDM) is rated at -11 A.

Does the PJS6811 support high-temperature operation?

Yes, the operating junction and storage temperature range extends up to +150 °C.

What is the typical gate-source leakage current?

The typical gate-source leakage current (IGSS) is +10 nA under test conditions of VGS=+12V and VDS=0V.