PJS6816_S1_00001

Overview

The PJS6816_S1_00001 is a 20V N-Channel Enhancement Mode MOSFET manufactured by Panjit International Inc. in an SOT-23 6L package. It supports a continuous drain current of 5.2A and a pulsed drain current of 20.8A. The device features low on-state resistance, with maximum values of 29mΩ at VGS=4.5V/ID=5.2A, 42mΩ at VGS=2.5V/ID=3.7A, and 85mΩ at VGS=1.8V/ID=1.6A. Key electrical parameters include a gate-source voltage limit of +12V, power dissipation of 1.25W at 25°C, and a junction temperature range of -55°C to 150°C.

Feature Summary

• Advanced Trench Process Technology for optimized performance
• Specially designed for switch load and PWM applications
• Lead-free construction compliant with EU RoHS 2.0 directive
• Green molding compound meeting IEC 61249 standard

Applications

• Switch load management
• Pulse Width Modulation (PWM) circuits

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging details. The source material indicates that suffixes such as _S1_ correspond to 3K pcs per 7-inch reel, while _S2_ corresponds to 10K pcs per 13-inch reel. Confirming the exact suffix ensures the correct packing quantity and type are received. Always cross-reference the latest datasheet revision from the manufacturer to ensure compliance with current specifications.

Selection Notes

Select this component for low-voltage switching applications requiring high efficiency. The low RDS(ON) across various gate drive voltages makes it suitable for systems operating at 1.8V, 2.5V, or 4.5V logic levels. Ensure the thermal design accounts for the 100°C/W junction-to-ambient thermal resistance and the 10 mW/°C derating factor above 25°C ambient temperature to maintain reliability within the specified operating range.

Part Context

This part belongs to the PJS6816 series of N-Channel Enhancement Mode MOSFETs produced by Panjit International Inc. The series utilizes advanced trench process technology to achieve low on-resistance and fast switching speeds. These devices are engineered for compact surface-mount applications, offering a balance of current handling capability and thermal performance in small form-factor packages like the SOT-23 6L.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. When evaluating alternatives, verify that any replacement matches the 20V drain-source voltage, 5.2A continuous current rating, and SOT-23 6L package dimensions. Ensure the alternative device meets the same RDS(ON) specifications at comparable gate drive voltages to maintain circuit performance.

FAQ

What is the maximum pulsed drain current for the PJS6816?

The maximum pulsed drain current (IDM) is 20.8 A.

What is the typical gate charge (Qg) under standard test conditions?

The typical total gate charge (Qg) is 7 nC, measured at VDS=10V, ID=5.2A, and VGS=4.5V.

Is the PJS6816 suitable for automotive or medical applications?

No. The manufacturer explicitly states that these products are not designed or authorized for equipment requiring high reliability, life-saving instruments, or transportation equipment.