PJS6830_S1_00001

Overview

The PJS6830_S1_00001 is a dual N-channel enhancement mode MOSFET with an integrated ESD protection rating of 2kV HBM. It operates at a drain-source voltage of 20V and supports a continuous drain current of 2A, with a pulsed current capability of 8A. The device utilizes advanced trench process technology to achieve low on-resistance values: less than 150mΩ at VGS=4.5V/ID=2.0A, less than 215mΩ at VGS=2.5V/ID=1.5A, and less than 400mΩ at VGS=1.8V/ID=0.5A. Packaged in a SOT-23 6L format, it features a maximum power dissipation of 1.25W at 25°C ambient temperature.

Feature Summary

• Advanced Trench Process Technology for optimized switching performance
• Integrated ESD Protection rated at 2KV HBM
• Low On-State Resistance across multiple gate drive voltages
• Lead-free construction compliant with EU RoHS 2.0 standards

Applications

• Switch load control circuits
• PWM (Pulse Width Modulation) applications
• General purpose low-side switching

Procurement Notes

Verify the specific ordering suffix _S1_00001 against official Panjit documentation to confirm packaging details, such as the 3K pcs / 7” reel configuration and SG0 marking version. Ensure compliance requirements match the Halogen-free and IEC 61249 green molding compound specifications listed in the datasheet before finalizing procurement orders.

Selection Notes

Select this component when a compact dual N-channel solution with built-in ESD protection is required for low-voltage switching tasks. The device is suitable for designs needing operation at VGS levels as low as 1.8V, provided the resulting RDS(on) increase is acceptable within the system's thermal and efficiency constraints.

Part Context

This part belongs to the PJS6830 series manufactured by Panjit International Inc. It is specifically designed as a dual N-channel enhancement mode MOSFET intended for space-constrained applications requiring robust ESD handling capabilities alongside efficient power switching characteristics in a small SOT-23 6L package.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation. Verify pinout compatibility and electrical parameters if considering alternative dual N-channel MOSFETs from other manufacturers.

FAQ

What is the maximum pulsed drain current for the PJS6830?

The maximum pulsed drain current (IDM) is 8 A, subject to package limitations.

Does the PJS6830 include ESD protection?

Yes, the device is specially designed with ESD protection rated at 2KV HBM.

What is the operating junction temperature range?

The operating junction and storage temperature range is -55°C to +150°C.