PJT138K-AU_R1_000A1

PJT138K-AU_R1_000A1

$0.16
  • Description:MOSFET 2N-CH 50V 0.36A SOT363
  • Series:-

SKU:7d4315dcc378 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:MOSFET 2N-CH 50V 0.36A SOT363
  • Series:-
  • Mfr:Panjit International Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):50V
  • Current - Continuous Drain (Id) @ 25°C:360mA (Ta)
  • Rds On (Max) @ Id, Vgs:1.6Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id:1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:1nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:50pF @ 25V
  • Power - Max:236mW (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:SOT-363
  • Grade:Automotive
  • Qualification:AEC-Q101

Download product information

PJT138K-AU_R1_000A1

Overview

The PJT138K-AU_R1_000A1 is a 50V N-Channel Enhancement Mode MOSFET manufactured by Panjit International Inc. It features an SOT-363 package and supports surface mount installation. Key electrical parameters include a drain-source voltage (Vds) of 50V, continuous drain current (Id) of 360mA at Ta, and a maximum power dissipation (Pd) of 236mW at Ta. The device exhibits a typical on-resistance (Rds(on)) of 1.6 Ohms at 500mA and 10V gate-source voltage. Gate threshold voltage (Vgs(th)) is specified at 1.5V with 250µA current. Input capacitance is 50pF at 25V, and gate charge is 1nC at 4.5V. Operating temperature ranges from -55°C to +150°C TJ. It holds AEC-Q101 qualification for automotive applications.

Feature Summary

  • ESD protected N-channel enhancement mode MOSFET design
  • Automotive grade AEC-Q101 qualification
  • Compact SOT-363 surface mount packaging

Applications

  • Automotive electronic circuits requiring ESD protection
  • Low voltage switching applications
  • General purpose N-channel MOSFET tasks

Procurement Notes

Verify the specific suffix R1_000A1 against official Panjit documentation to confirm package type and reel specifications. Ensure compatibility with SOT-363 footprint requirements in your PCB layout. Confirm AEC-Q101 certification status if deploying in automotive environments. Cross-reference datasheet revisions to ensure parameter consistency. Validate thermal management capabilities given the 236mW power dissipation limit.

Selection Notes

Select this component when a 50V N-channel MOSFET with integrated ESD protection is required in space-constrained designs. The SOT-363 package offers a compact solution compared to standard SOT-23 variants. Consider the 360mA current rating and 1.6 Ohm on-resistance for load matching. Verify that the -55°C to 150°C operating range meets environmental conditions. Check gate charge requirements for driving speed needs.

Part Context

This part belongs to the Panjit PJA/PJT series of small-signal MOSFETs designed for portable and automotive electronics. The series emphasizes ESD robustness alongside standard switching performance. Similar parts in the lineup may vary in current ratings or package styles like SOT-23 or SOT-563. The PJT variant specifically denotes the SOT-363 configuration within this product family.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided source material.

PJT138K-AU_R1_000A1PJT138K-AU_R1_000A1
$0.16
Buy Now