PJT7802_S1_00001

$0.42

Description：MOSFET 2N-CH 20V 0.5A SOT363
Series：-

SKU:ce68531cafa0 Category: FET, MOSFET Arrays Brand: Panjit International Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 20V 0.5A SOT363
Series：-
Mfr：Panjit International Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：500mA (Ta)
Rds On (Max) @ Id, Vgs：400mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：39pF @ 10V
Power - Max：350mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-TSSOP, SC-88, SOT-363
Supplier Device Package：SOT-363
Grade：-
Qualification：-

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PJT7802_S1_00001

Overview

The Panjit PJT7802 is a 20V N-Channel Enhancement Mode MOSFET housed in an SOT-363 package. It features an advanced trench process technology and integrated ESD protection. The device supports a continuous drain current of 0.5A and a pulsed drain current of 2.0A, with a maximum power dissipation of 350mW at 25°C. Key electrical parameters include a drain-source breakdown voltage (BVDSS) of 20V and a gate threshold voltage (VGS(th)) ranging from 0.4V to 1.0V. On-state resistance (RDS(on)) varies by drive condition: typically 0.32Ω at VGS=4.5V/ID=0.5A, 0.6Ω at VGS=2.5V/ID=0.3A, and 1.2Ω at VGS=1.8V/ID=0.1A. Total gate charge is typically 0.9nC.

Feature Summary

Advanced Trench Process Technology for optimized performance
Integrated Electrostatic Discharge (ESD) protection
Lead-free construction compliant with EU RoHS directives
Halogen-free green molding compound per IEC61249 standard

Applications

Switch load applications
Pulse Width Modulation (PWM) control circuits

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging quantities and reel specifications. Confirm that the component lot number is available for tracking purposes if required for quality assurance or complaint resolution procedures.

Selection Notes

Select this component for low-voltage switching tasks requiring compact surface-mount integration. Evaluate RDS(on) requirements against available gate drive voltages, as resistance increases significantly at lower VGS levels. Ensure thermal management accommodates the junction-to-ambient thermal resistance of 357°C/W.

Part Context

This part belongs to the Panjit International Inc. discrete semiconductor portfolio, specifically within their N-Channel Enhancement Mode MOSFET lineup. The SOT-363 package provides a small form factor suitable for space-constrained printed circuit board layouts.