PJT7812_R1_00001

$0.42

Description：MOSFET 2N-CH 30V 0.5A SOT363
Series：-

SKU:9abc1ed735ea Category: FET, MOSFET Arrays Brand: Panjit International Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 0.5A SOT363
Series：-
Mfr：Panjit International Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：500mA (Ta)
Rds On (Max) @ Id, Vgs：1.2Ohm @ 500mA, 4.5V
Vgs(th) (Max) @ Id：1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.87nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：34pF @ 15V
Power - Max：350mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-TSSOP, SC-88, SOT-363
Supplier Device Package：SOT-363
Grade：-
Qualification：-

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PJT7812_R1_00001

Overview

The PJT7812 is a 30V N-Channel Enhancement Mode MOSFET manufactured by Panjit International Inc. in an SOT-363 package. It features ESD protection rated at 2KV HBM and complies with EU RoHS directives using halogen-free green molding compound. The device supports a continuous drain current of 500mA and a pulsed drain current of 1500mA, with power dissipation of 350mW at 25°C. Key electrical parameters include a maximum RDS(on) of 1.2Ω at VGS=4.5V/ID=500mA, 1.6Ω at VGS=2.5V/ID=200mA, and 2.3Ω at VGS=1.8V/ID=100mA. Operating junction temperature ranges from -55°C to 150°C.

Feature Summary

Specially designed for switch load and PWM applications
ESD protected up to 2KV HBM
Lead-free construction compliant with EU RoHS 2011/65/EU directive
Green molding compound as per IEC61249 Std (Halogen Free)

Applications

Switch Load
PWM Application

Procurement Notes

Verify the specific ordering suffix against official Panjit documentation to confirm packing type, such as 3K pcs on a 7-inch reel or 12K pcs on a 13-inch reel. Ensure the component marking matches T12. Confirm compliance requirements including lead-free status and halogen-free green molding compound specifications before procurement.

Selection Notes

Select this component for low-voltage switching applications requiring small form factor packaging. Evaluate RDS(on) limits based on the required gate drive voltage and expected drain current levels. Consider thermal derating above 25°C when designing for higher ambient temperatures or continuous operation near the maximum power dissipation limit.

Part Context

This part belongs to the PJT7812 series of N-Channel Enhancement Mode MOSFETs produced by Panjit International Inc. The manufacturer specializes in various semiconductor products including MOSFETs, diodes, and transistors for automotive, industrial, and consumer electronics markets.