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The PJT7828_R1_00001 is a 30V N-Channel Enhancement Mode MOSFET manufactured by Panjit International Inc. It is housed in an SOT-363 surface-mount package. The device supports a continuous drain current of 300mA at ambient temperature and dissipates up to 350mW of power under the same conditions. This component is designed for general-purpose switching applications requiring low voltage operation.
Verify the specific suffix R1_00001 against official Panjit documentation to confirm tape and reel specifications. Ensure the SOT-363 footprint matches the target PCB design. Confirm thermal management requirements align with the 350mW dissipation limit for the intended operating environment.
Select this part for applications requiring a compact N-Channel MOSFET with a 30V breakdown voltage. The SOT-363 package suits space-constrained designs. Evaluate the 300mA current capability against peak load requirements to ensure reliable operation without exceeding thermal limits.
This component belongs to Panjit's discrete semiconductor portfolio, specifically within the MOSFET category. It serves as a fundamental switching element in modern electronics, providing efficient control for low-power signals and loads in consumer and industrial devices.
Consult official Panjit substitution guides for verified equivalents. Cross-reference pinout compatibility and electrical parameters such as Vgs(th) and Rds(on) when evaluating alternative manufacturers' parts.