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PJW5N10_R2_00001 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Panjit International Inc.. Its product description is 100V N-CHANNEL ENHANCEMENT MODE. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for PJW5N10_R2_00001
- Description：100V N-CHANNEL ENHANCEMENT MODE
- Series：-
- Mfr：Panjit International Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：3.1A (Ta), 5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
- Rds On (Max) @ Id, Vgs：130mOhm @ 2.5A, 10V
- Vgs(th) (Max) @ Id：3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：12 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：707 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：3.1W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-223
- Package / Case：TO-261-4, TO-261AA
Single FETs, MOSFETs datasheet and documents for PJW5N10_R2_00001
Single FETs, MOSFETs Overview
The PJW5N10_R2_00001 is a 100V N-Channel Enhancement Mode MOSFET manufactured by Panjit International Inc. It utilizes silicon technology and is housed in an SOT-223-3 surface-mount package. The device supports a continuous drain current of 5A at 25°C case temperature, with a maximum power dissipation of 8W under the same conditions. Key electrical parameters include a drain-source breakdown voltage of 100V, a gate threshold voltage ranging from 2.0V to 3.5V, and a low on-state resistance of 130mΩ max at VGS=10V and ID=2.5A. The component operates within a junction temperature range of -55°C to +150°C.
Single FETs, MOSFETs Feature Summary
- Low on-resistance achieved through advanced process technology
- Lead-free construction compliant with EU RoHS 2.0 directives
- Green molding compound meeting IEC 61249 standards
- Solderable terminals per MIL-STD-750 Method 2026
Single FETs, MOSFETs Applications
- DC-DC converters
- Power switching circuits
- Load switches
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix matches the required packaging configuration before procurement. Confirm that the component status aligns with design requirements, as availability may vary. Ensure compliance with environmental directives such as RoHS 2.0 and IEC 61249 for green molding compounds during the sourcing phase.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring a 100V rating and moderate current handling up to 5A. The SOT-223 package offers a balance between thermal performance and board space efficiency. Consider the specific RDS(ON) values at different gate voltages when designing drive circuits to ensure optimal conduction losses.
Single FETs, MOSFETs Part Context
This part belongs to the Panjit N-Channel Enhancement Mode MOSFET family. These devices are designed using silicon technology to provide reliable switching performance. The product line targets general-purpose power management applications where low on-resistance and high efficiency are critical design factors.
Single FETs, MOSFETs Replacement Considerations
Consult official substitution lists or datasheets for compatible alternatives. Verify pinout compatibility and electrical parameter margins before replacing the component in existing designs.
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