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Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 0.7A SOT563
- Series：-
- Mfr：Panjit International Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：700mA (Ta)
- Rds On (Max) @ Id, Vgs：150mOhm @ 700mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：92pF @ 10V
- Power - Max：300mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SOT-563
- Grade：-
- Qualification：-
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Overview
The PJX8802_R1_00001 is a single N-Channel Enhancement Mode MOSFET manufactured by Panjit International Inc. It features a 20V Drain-Source Voltage (VDS) rating and supports a continuous drain current of 0.7A with a pulsed current capability of 2.8A. The device utilizes advanced trench process technology to achieve low on-state resistance, specified as a maximum of 150mΩ at VGS=4.5V and ID=0.7A. It is housed in an SOT-563 surface-mount package with a maximum power dissipation of 300mW at 25°C ambient temperature. The component includes integrated ESD protection rated at 2kV HBM and operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- Advanced Trench Process Technology for optimized performance
- Integrated ESD Protection rated at 2KV HBM
- Low On-State Resistance across multiple drive voltage levels
- Lead-free construction compliant with EU RoHS 2.0 directive
Applications
- Load Switch circuits
- PWM (Pulse Width Modulation) applications
Procurement Notes
Verify the specific ordering suffix matches the required packaging configuration before procurement. Confirm that the requested quantity aligns with the standard packing unit of 4,000 pieces per 7-inch reel. Ensure the component version corresponds to REV.03S or later to maintain consistency with the provided electrical characteristics and mechanical data.
Selection Notes
Select this component when a low-voltage, single-channel N-Channel MOSFET is required for compact designs. The SOT-563 package offers space efficiency suitable for portable electronics. Consider the 20V breakdown voltage and 0.7A continuous current limits to ensure adequate headroom for the target load. Verify that the gate drive voltage meets the requirements for achieving the specified low RDS(on) values.
Part Context
This part belongs to the PJX8802 series of N-Channel Enhancement Mode MOSFETs produced by Panjit International Inc. The manufacturer specializes in discrete semiconductor devices including MOSFETs, diodes, and transistors. The PJX8802 variant specifically targets applications requiring robust ESD protection and efficient switching capabilities in small form-factor packages.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Cross-referencing requires matching the 20V VDS, 0.7A ID, SOT-563 package, and ESD protection specifications against alternative manufacturers' datasheets.
