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Product Detailed Parameters
- Description：MOSFET 2P-CH 20V 0.6A SOT563
- Series：-
- Mfr：Panjit International Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：600mA (Ta)
- Rds On (Max) @ Id, Vgs：340mOhm @ 600mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：2.2nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：151pF @ 10V
- Power - Max：300mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SOT-563
- Grade：-
- Qualification：-
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Overview
The PJX8803_R1_00001 is a dual P-Channel Enhancement Mode MOSFET manufactured by Panjit International Inc. It features a -20V Drain-Source Voltage (VDS) and a continuous drain current of -0.6A. The device utilizes advanced trench process technology to achieve low on-state resistance, with RDS(on) values ranging from 340mΩ at VGS=-4.5V to 600mΩ at VGS=-1.8V. Packaged in an SOT-563-6 configuration, it includes ESD protection rated at 2KV HBM. Key electrical parameters include a gate threshold voltage of -1.0V maximum, a total gate charge of 2.2nC, and a power dissipation capability of 300mW at 25°C ambient temperature.
Feature Summary
- Advanced Trench Process Technology for optimized switching performance
- Integrated ESD Protection rated at 2KV Human Body Model
- Low On-State Resistance across various gate drive voltages
- Designed specifically for switch load and PWM applications
Applications
- Switch Load circuits
- PWM Application modules
- General purpose low-voltage switching
Procurement Notes
Verify the specific ordering suffix against official distributor catalogs to ensure correct packaging quantities and reel specifications. Confirm RoHS 2.0 compliance status and lead times directly with authorized suppliers prior to procurement. Ensure storage conditions adhere to moisture sensitivity level requirements specified in the datasheet to maintain component integrity before soldering.
Selection Notes
Select this component for designs requiring a compact dual P-Channel MOSFET solution with integrated ESD protection. Evaluate the RDS(on) characteristics against the specific gate drive voltage available in the system, as resistance varies significantly between -1.8V and -4.5V thresholds. Consider the thermal derating curve if operating above 25°C ambient temperature to ensure junction temperatures remain within the -55°C to +150°C range.
Part Context
This part belongs to the PJX8803 series of low-voltage P-Channel MOSFETs produced by Panjit International Inc. The manufacturer specializes in discrete semiconductors including MOSFETs, diodes, and transistors. This specific model is designed to meet modern space-constrained PCB layouts while providing robust protection against electrostatic discharge events common in consumer electronics assembly.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical parameter margins carefully when considering alternative manufacturers' components for direct replacement.
