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Product Detailed Parameters
- Description：MOSFET 2P-CH 30V 0.5A SOT563
- Series：-
- Mfr：Panjit International Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：500mA (Ta)
- Rds On (Max) @ Id, Vgs：390mOhm @ 500mA, 4.5V
- Vgs(th) (Max) @ Id：1.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：137pF @ 15V
- Power - Max：300mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SOT-563
- Grade：-
- Qualification：-
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Overview
The PJX8805_R1_00001 is a dual P-Channel Enhancement Mode MOSFET manufactured by Panjit International Inc. It utilizes advanced trench process technology and features ESD protection rated at 2kV HBM. The device operates with a drain-source voltage of -30V and a continuous drain current of -0.5A. Key electrical parameters include a maximum on-resistance of 990mΩ at VGS=-1.8V, a gate threshold voltage ranging from -0.5V to -1.3V, and a total gate charge of 1.6nC. It is housed in an SOT-563 package with a power dissipation capacity of 300mW.
Feature Summary
- Advanced Trench Process Technology for optimized performance
- ESD Protection rated at 2KV HBM
- Low On-State Resistance across various drive voltages
- Lead-free construction compliant with EU RoHS 2.0
Applications
- Switch Load Applications
- PWM Application Circuits
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging details. The datasheet indicates that suffixes such as _R1 correspond to 4K pcs per 7-inch reel configurations. Ensure compliance with halogen-free requirements and verify component marking codes match the specified X05 identifier before procurement.
Selection Notes
Select this component for low-voltage switching applications requiring dual P-Channel configuration. Evaluate thermal resistance characteristics and derating curves above 25°C when designing for higher ambient temperatures. Confirm that the required gate drive voltage aligns with the specified RDS(on) thresholds for optimal efficiency.
Part Context
This part belongs to the PJX8805 series of dual P-Channel Enhancement Mode MOSFETs. The series is designed for general-purpose switching tasks within consumer electronics and industrial control systems. It shares common mechanical dimensions and pinout configurations with other devices in the same family.
Replacement Considerations
Consult official manufacturer substitution lists for verified alternatives. Cross-reference critical parameters including Drain-Source Voltage, Continuous Drain Current, and On-State Resistance to ensure functional compatibility without modifying existing circuit designs.
FAQ
What is the ESD protection rating for the PJX8805?
The device provides Electrostatic Discharge (ESD) protection rated at 2KV Human Body Model (HBM).
What is the maximum power dissipation at 25°C?
The maximum power dissipation is 300 mW at an ambient temperature of 25°C.
How does the on-resistance vary with gate-source voltage?
The typical on-resistance decreases as the magnitude of the gate-source voltage increases, dropping from 990mΩ at -1.8V to 318mΩ at -4.5V under specified test conditions.
