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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 0.35A SOT563
- Series：-
- Mfr：Panjit International Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：350mA (Ta)
- Rds On (Max) @ Id, Vgs：1.2Ohm @ 350mA, 4.5V
- Vgs(th) (Max) @ Id：1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.87nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：34pF @ 15V
- Power - Max：300mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SOT-563
- Grade：-
- Qualification：-
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Overview
The PJX8812_R1_00001 is a dual N-Channel Enhancement Mode MOSFET manufactured by Panjit International Inc. It features a 30V drain-source breakdown voltage and supports a continuous drain current of 350mA at 25°C. The device incorporates a low on-resistance of 2.3 Ohms and operates with a gate-source voltage range of ±10V. Designed for surface mount applications, it utilizes the SOT-563-6 package. Key switching parameters include a typical turn-on delay of 7.1ns and a fall time of 31ns. The component is rated for power dissipation up to 300mW and functions within an ambient temperature range of -55°C to +150°C.
Feature Summary
- Dual configuration integrating two independent N-channel enhancement mode transistors in a single compact package.
- Integrated electrostatic discharge (ESD) protection mechanisms designed to safeguard sensitive circuit nodes.
- Utilizes advanced trench process technology to achieve optimized switching performance and low conduction losses.
Applications
- Load switching applications requiring compact dual-transistor solutions.
- Pulse Width Modulation (PWM) control circuits for motor or LED drivers.
- Low-voltage drive systems compatible with 1.2V logic interfaces.
Procurement Notes
Verify the lifecycle status before procurement as the component is marked NRND, indicating it is not recommended for new designs. Confirm that the SOT-563-6 package dimensions align with existing PCB footprints. Ensure ESD handling protocols are strictly followed during assembly due to the integrated protection features. Validate that the 350mA current rating meets the specific load requirements of the target application.
Selection Notes
Select this component when a dual N-channel configuration is required within a minimal footprint. The 30V rating suits low-voltage DC-DC converters and battery-powered devices. Consider the 2.3 Ohm on-resistance for efficiency calculations in low-current scenarios. Verify compatibility with the intended gate drive voltage levels, specifically noting the 1.2V low-voltage drive capability for modern logic families.
Part Context
This part belongs to the NFET-30TEMN series from Panjit International Inc., focusing on low-voltage enhancement mode MOSFETs. The manufacturer specializes in discrete semiconductors including MOSFETs, diodes, and SiC devices for automotive, industrial, and consumer electronics markets. The PJX8812 variant specifically targets space-constrained designs requiring dual-channel functionality.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Due to the NRND status, alternative sourcing should prioritize verifying pinout compatibility and electrical parameter equivalence with other dual N-channel MOSFETs in the SOT-563 package.
