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Product Detailed Parameters
- Description：JFET N-CH 40V SOT23
- Series：-
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Voltage - Breakdown (V(BR)GSS)：40 V
- Drain to Source Voltage (Vdss)：40 V
- Current - Drain (Idss) @ Vds (Vgs=0)：50 mA @ 20 V
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：4 V @ 1 nA
- Input Capacitance (Ciss) (Max) @ Vds：14pF @ 20V
- Resistance - RDS(On)：30 Ohms
- Power - Max：250 mW
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23 (TO-236AB)
- Grade：-
- Qualification：-
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Overview
The PMBF4391,215 is a silicon N-channel depletion-type junction field-effect transistor (JFET) manufactured by NXP Semiconductors. It is housed in a surface-mount SOT-23 package and designed for low-power chopper or switching applications in thick and thin-film circuits. The device features interchangeable drain and source terminals. Key electrical parameters include a maximum drain-source voltage of 40 V, a continuous drain current exceeding 50 mA at VDS=20V and VGS=0, and a gate-source cut-off voltage greater than 4 V. The on-resistance is less than 30 Ohms at 1 kHz, with a feedback capacitance under 3.5 pF.
Feature Summary
- Symmetrical N-channel depletion mode JFET structure
- Interchangeable drain and source terminals
- Designed for low-power chopper and switching applications
Applications
- Thick-film integrated circuits
- Thin-film integrated circuits
- Low-power chopper circuits
- Switching applications in industrial environments
Procurement Notes
Verify the component status as the datasheet indicates potential product lifecycle changes. Confirm that the specific ordering suffix matches the required tape and reel packaging format. Ensure compliance with RoHS directives and check for any recent updates to the absolute maximum ratings before finalizing procurement specifications.
Selection Notes
Select this component when an N-channel depletion JFET with interchangeable terminals is required for low-power analog or switching tasks. The PMBF4391 offers a higher minimum drain current compared to the PMBF4392 and PMBF4393 variants within the same series. Consider the thermal resistance and power derating curves for high-temperature operation scenarios.
Part Context
This part belongs to the PMBF439x series of N-channel FETs from NXP Semiconductors. It shares the same physical SOT-23 package and basic structural characteristics with the PMBF4392 and PMBF4393 models. The primary distinction lies in the specific electrical thresholds for drain current and gate-source cut-off voltage, allowing designers to choose based on precise conduction requirements.
Replacement Considerations
Direct substitutes within the same family include the PMBF4392 and PMBF4393, though their drain current and cut-off voltage specifications differ. Verify pinout compatibility and ensure the alternative meets the specific Idss and Vgs(off) requirements of the original design.
FAQ
Are the drain and source terminals fixed?
No, the drain and source terminals are interchangeable, providing flexibility in circuit layout.
What is the maximum gate-source breakdown voltage?
The maximum gate-source breakdown voltage is 40 V.
Is this device suitable for automotive applications?
No, unless explicitly stated otherwise, this product is not automotive qualified and should not be used in automotive equipment without customer risk assessment.
